參數(shù)資料
型號(hào)： 93LC46-I/SN
元件分類： PROM
英文描述： 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝： 0.150 INCH, PLASTIC, SOIC-8
文件頁(yè)數(shù)： 18/20頁(yè)
文件大?。?/td> 344K
代理商： 93LC46-I/SN
2004 Microchip Technology Inc.
DS21712B-page 7
93LC46/56/66
2.7
Write
The WRITE instruction is followed by 16 bits (or by 8
bits) of data which are written into the specified
address. After the last data bit is put on the DI pin,
CS must be brought low before the next rising edge
of the CLK clock. This falling edge of CS initiates the
self-timed auto-erase and programming cycle.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire write cycle is complete.
DO at logical “0” indicates that programming is still in
progress. DO at logical “1” indicates that the register at
the specified address has been written with the data
specified and the device is ready for another
instruction.
The write cycle takes 4 ms per word typical.
2.8
Erase All (ERAL)
The ERAL instruction will erase the entire memory array
to the logical “1” state. The ERAL cycle is identical to
the ERASE cycle except for the different opcode. The
ERAL cycle is completely self-timed and commences
at the falling edge of the CS. Clocking of the CLK pin is
not necessary after the device has entered the self
clocking mode. The ERAL instruction is ensured at 5V
±10%.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire write cycle is complete.
The ERAL cycle takes (8 ms typical).
2.9
Write All (WRAL)
The WRAL instruction will write the entire memory array
with the data specified in the command. The WRAL
cycle is completely self-timed and commences at the
falling edge of the CS. Clocking of the CLK pin is not
necessary after the device has entered the self clock-
ing mode. The WRAL command does include an auto-
matic ERAL cycle for the device. Therefore, the WRAL
instruction does not require an ERAL instruction but the
chip must be in the EWEN status. The WRAL instruction
is ensured at 5V ±10%.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (Tcsl).
The WRAL cycle takes 16 ms typical.
FIGURE 2-1:
READ TIMING
CS
CLK
DI
DO
11
0
An
A0
High-Z
0
Dx
D0
Dx
D0
Dx
D0
相關(guān)PDF資料
PDF描述
93LC66-I/SN 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
93LC46-I/P 64 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8
93LC66XT-I/SN 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
93LC76C-I/MCG 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
93AA76C-I/MCG 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
93LC46-P 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K/2K/4K 2.0V Microwire Serial EEPROM
93LC46-SL 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K/2K/4K 2.0V Microwire Serial EEPROM
93LC46-SM 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K/2K/4K 2.0V Microwire Serial EEPROM
93LC46SN 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K/2K/4K 2.5V Microwire Serial EEPROM
93LC46-SN 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K/2K/4K 2.0V Microwire Serial EEPROM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*