參數(shù)資料
型號(hào)： 93C86T-E/SN
元件分類： PROM
英文描述： 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝： 0.150 INCH, PLASTIC, SOIC-8
文件頁(yè)數(shù)： 14/20頁(yè)
文件大?。?/td> 281K
代理商： 93C86T-E/SN
2004 Microchip Technology Inc.
DS21132E-page 3
93C76/86
TABLE 1-1:
DC CHARACTERISTICS
TABLE 1-2:
AC CHARACTERISTICS
DC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = +4.5V to +5.5V
Commercial
(C): TA = 0°C to -40°C
Industrial
(I):
TA = -40°C to +85°C
Automotive
(E): TA = -40
°C to +125°C
Parameter
Symbol
Min.
Max.
Units
Conditions
High-level input voltage
VIH1
2.0
VCC +1
V
—
Low-level input voltage
VIL1
-0.3
0.8
V
—
Low-level output voltage
VOL1
—0.4
V
IOL = 2.1 mA; VCC = 4.5V
VOL2
—0.2
V
IOL =100
A; VCC = 4.5V
High-level output voltage
VOH1
2.4
—
V
IOH = -400
A; VCC = 4.5V
VOH2
VCC-0.2
—
V
IOH = -100
A; VCC = 4.5V.
Input leakage current
ILI
-10
10
AVIN = 0.1V to VCC
Output leakage current
ILO
-10
10
AVOUT = 0.1V to VCC
Pin capacitance
(all inputs/outputs)
CINT
—7
pF
(Note 1)
TA = +25°C, FCLK = 1 MHz
Operating current
ICC write
—
3
mA
FCLK = 2 MHz; VCC = 5.5V
ICC read
—
1.5
mA
FCLK = 2 MHz; VCC = 5.5V
Standby current
ICCS
—100
A
CLK = CS = 0V; VCC = 5.5V
DI = PE = VSS
ORG = VSS or VCC
Note 1:
This parameter is periodically sampled and not 100% tested.
AC CHARACTERISTICS
Applicable over recommended operating ranges shown below unless otherwise noted:
VCC = +4.5V to +5.5V
Commercial
(C): TA = 0°C to -40°C
Industrial
(I):
TA = -40°C to +85°C
Automotive
(E): TA = -40
°C to +125°C
Parameter
Symbol
Min.
Max.
Units
Conditions
Clock frequency
FCLK
—
2
MHz
Vcc
≥ 4.5V
Clock high time
TCKH
300
—
ns
Clock low time
TCKL
200
—
ns
Chip select setup time
TCSS
50
—
ns
Relative to CLK
Chip select hold time
TCSH
0—
ns
Chip select low time
TCSL
250
—
ns
Relative to CLK
Data input setup time
TDIS
100
—
ns
Relative to CLK
Data input hold time
TDIH
100
—
ns
Relative to CLK
Data output delay time
TPD
—
400
ns
CL = 100 pF
Data output disable time
TCZ
—
100
ns
Status valid time
TSV
—
500
ns
CL = 100 pF
Program cycle time
TWC
—
10
ms
Erase/Write mode (Note 2)
TEC
—
15
ms
ERAL mode
TWL
—30
ms
WRAL mode
Endurance
—
1M
—
cycles
25°C, VCC = 5.0V, Block mode
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
Typical program cycle is 4 ms per word.
3:
This parameter is not tested but ensured by characterization. For endurance estimates in a specific
application, please consult the Total Endurance Model which can be obtained from Microchip’s web site
at www.microchip.com.
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