參數(shù)資料
型號(hào)： 93C86CT-I/MC
元件分類(lèi)： PROM
英文描述： 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝： 2 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, PLASTIC, DFN-8
文件頁(yè)數(shù)： 29/30頁(yè)
文件大?。?/td> 520K
代理商： 93C86CT-I/MC
93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C
DS21797J-page 8
2008 Microchip Technology Inc.
2.6
Erase/Write Disable and Enable
(EWDS/EWEN)
The 93XX86A/B/C powers up in the Erase/Write
Disable (EWDS) state. All programming modes must be
preceded by an Erase/Write Enable (EWEN) instruction.
Once the EWEN instruction is executed, programming
remains enabled until an EWDS instruction is executed
or VCC is removed from the device.
To protect against accidental data disturbance, the
EWDS
instruction can be used to disable all Erase/Write
functions
and
should
follow
all
programming
operations.
Execution
of
a
READ
instruction
is
independent of both the EWEN and EWDS instructions.
FIGURE 2-3:
EWDS TIMING
FIGURE 2-4:
EWEN TIMING
2.7
Read
The READ instruction outputs the serial data of the
addressed memory location on the DO pin. A dummy
zero bit precedes the 8-bit (If ORG pin is low or A-Version
devices) or 16-bit (If ORG pin is high or B-version
devices) output string.
The output data bits will toggle on the rising edge of the
CLK and are stable after the specified time delay (TPD).
Sequential read is possible when CS is held high. The
memory data will automatically cycle to the next register
and output sequentially.
FIGURE 2-5:
READ TIMING
CS
CLK
DI
1
00
0
x
x
TCSL
1
x
CS
CLK
DI
00
11
x
TCSL
CS
CLK
DI
DO
11
0
AN
A0
High-Z
0
Dx
D0
Dx
D0
Dx
D0
相關(guān)PDF資料
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