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    參數(shù)資料
    型號(hào): 93C86CT-E/SNG
    元件分類: PROM
    英文描述: 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
    封裝: 3.90 MM, ROHS COMPLIANT, PLASTIC, SOIC-8
    文件頁(yè)數(shù): 28/30頁(yè)
    文件大?。?/td> 520K
    代理商: 93C86CT-E/SNG
    2008 Microchip Technology Inc.
    DS21797J-page 7
    93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C
    2.4
    Erase
    The ERASE instruction forces all data bits of the
    specified address to the logical ‘1’ state. The rising
    edge of CLK before the last address bit initiates the
    write cycle.
    The DO pin indicates the Ready/Busy status of the
    device if CS is brought high after a minimum of 250 ns
    low (TCSL). DO at logical ‘0’ indicates that programming
    is still in progress. DO at logical ‘1’ indicates that the
    register at the specified address has been erased and
    the device is ready for another instruction.
    FIGURE 2-1:
    ERASE TIMING
    2.5
    Erase All (ERAL)
    The Erase All (ERAL) instruction will erase the entire
    memory array to the logical ‘1’ state. The ERAL cycle
    is identical to the erase cycle, except for the different
    opcode. The ERAL cycle is completely self-timed. The
    rising edge of CLK before the last data bit initiates the
    write cycle. Clocking of the CLK pin is not necessary
    after the device has entered the ERAL cycle.
    The DO pin indicates the Ready/Busy status of the
    device, if CS is brought high after a minimum of 250 ns
    low (TCSL).
    VCC must be
    ≥4.5V for proper operation of ERAL.
    FIGURE 2-2:
    ERAL TIMING
    Note:
    After the Erase cycle is complete, issuing
    a Start bit and then taking CS low will clear
    the Ready/Busy status from DO.
    CS
    CLK
    DI
    DO
    TCSL
    Check Status
    11
    1
    AN
    AN-1
    AN-2
    A0
    TSV
    TCZ
    Busy
    Ready
    High-Z
    TWC
    High-Z
    Note:
    After the ERAL command is complete,
    issuing a Start bit and then taking CS low
    will clear the Ready/Busy status from DO.
    CS
    CLK
    DI
    DO
    TCSL
    Check Status
    10
    0
    1
    0
    x
    x
    TSV
    TCZ
    Busy
    Ready
    High-Z
    TEC
    High-Z
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    相關(guān)代理商/技術(shù)參數(shù)
    參數(shù)描述
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    93C86CT-I/MS 功能描述:電可擦除可編程只讀存儲(chǔ)器 1024x16-2048x8 5.0V IND TEMP, MSOP8 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8