參數(shù)資料
型號: 93C86BT-E/MC
元件分類: PROM
英文描述: 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝: 2 X 3 MM, 0.90 MM HEIGHT, ROHS COMPLIANT, PLASTIC, DFN-8
文件頁數(shù): 2/15頁
文件大小: 636K
代理商: 93C86BT-E/MC
93AA86A/B/C, 93LC86A/B/C, 93C86A/B/C
DS21797H-page 10
Preliminary
2007 Microchip Technology Inc.
2.8
Write
The WRITE instruction is followed by 8 bits (If ORG is
low or A-version devices) or 16 bits (If ORG pin is high
or B-version devices) of data which are written into the
specified address. The self-timed auto-erase and
programming cycle is initiated by the rising edge of CLK
on the last data bit.
The DO pin indicates the Ready/Busy status of the
device, if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical ‘0’ indicates that programming
is still in progress. DO at logical ‘1’ indicates that the
register at the specified address has been written with
the data specified and the device is ready for another
instruction.
FIGURE 2-6:
WRITE TIMING
Note:
The write sequence requires a logic high
signal on the PE pin prior to the rising
edge of the last data bit.
Note:
After the Write cycle is complete, issuing a
Start bit and then taking CS low will clear
the Ready/Busy status from DO
CS
CLK
DI
DO
1
0
1
An
A0
Dx
D0
Busy
Ready
High-Z
TWC
TCSL
TCZ
TSV
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