參數資料
型號: 93C66BE/SN
元件分類: PROM
英文描述: 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝: 0.150 INCH, PLASTIC, SOIC-8
文件頁數: 9/13頁
文件大?。?/td> 102K
代理商: 93C66BE/SN
1998 Microchip Technology Inc.
DS21207C-page 5
93C66A/B
3.4
ERASE
The ERASE instruction forces all data bits of the spec-
ied address to the logical “1” state. This cycle begins
on the rising clock edge of the last address bit.
The DO pin indicates the READY/BUSY status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL). DO at logical “0” indicates that program-
ming is still in progress. DO at logical “1” indicates that
the register at the specied address has been erased
and the device is ready for another instruction.
3.5
Erase All (ERAL)
The Erase All (ERAL) instruction will erase the entire
memory array to the logical “1” state. The ERAL cycle
is identical to the ERASE cycle, except for the different
opcode. The ERAL cycle is completely self-timed and
commences at the rising clock edge of the last address
bit. Clocking of the CLK pin is not necessary after the
device has entered the ERAL cycle.
The DO pin indicates the READY/BUSY status of the
device, if CS is brought high after a minimum of 250 ns
low (TCSL) and before the entire ERAL cycle is com-
plete.
FIGURE 3-2:
ERASE TIMING
FIGURE 3-3:
ERAL TIMING
CS
CLK
DI
DO
TCSL
CHECK STATUS
1
1AN
AN-1
AN-2
A0
TSV
TCZ
BUSY
READY
HIGH-Z
TWC
HIGH-Z
CS
CLK
DI
DO
TCSL
CHECK STATUS
10
0
1
0
X
X
TSV
TCZ
BUSY
READY
HIGH-Z
TEC
HIGH-Z
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