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參數(shù)資料
| 型號： | 93C66ATE/SN |
| 元件分類： | PROM |
| 英文描述： | 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 0.150 INCH, PLASTIC, SOIC-8 |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 102K |
| 代理商： | 93C66ATE/SN |
93C66A/B
DS21207C-page 4
1998 Microchip Technology Inc.
3.0
FUNCTIONAL DESCRIPTION
Instructions, addresses, and write data are clocked into
the DI pin on the rising edge of the clock (CLK). The DO
pin is normally held in a HIGH-Z state except when
reading data from the device, or when checking the
READY/BUSY status during a programming operation.
The READY/BUSY status can be veried during an
ERASE/WRITE operation by polling the DO pin; DO
low indicates that programming is still in progress, while
DO high indicates the device is ready. The DO will enter
the HIGH-Z state on the falling edge of the CS.
3.1
START Condition
The START bit is detected by the device if CS and DI
are both high with respect to the positive edge of CLK
for the rst time.
Before a START condition is detected, CS, CLK, and DI
may change in any combination (except to that of a
START condition), without resulting in any device oper-
ation (ERASE, ERAL, EWDS, EWEN, READ, WRITE,
and WRAL). As soon as CS is high, the device is no
longer in the standby mode.
An instruction following a START condition will only be
executed
if
the
required
amount
of
opcodes,
addresses, and data bits for any particular instruction is
clocked in.
After execution of an instruction (i.e., clock in or out of
the last required address or data bit) CLK and DI
become don't care bits until a new START condition is
detected.
3.2
Data In (DI) and Data Out (DO)
It is possible to connect the Data In (DI) and Data
Out (DI) pins together. However, with this conguration
it is possible for a “bus conict” to occur during the
“dummy zero” that precedes the READ operation, if A0
is a logic-high level. Under such a condition the voltage
level seen at DO is undened and will depend upon the
relative impedances of DO and the signal source driv-
ing A0. The higher the current sourcing capability of A0,
the higher the voltage at the DO pin.
3.3
Data Protection
During power-up, all programming modes of operation
are inhibited until VCC has reached a level greater than
3.8V. During power-down, the source data protection
circuitry acts to inhibit all programming modes when
Vcc has fallen below 3.8V at nominal conditions.
The ERASE/WRITE Disable (EWDS) and ERASE/
WRITE Enable (EWEN) commands give additional pro-
tection against accidentally programming during nor-
mal operation.
After power-up, the device is automatically in the
EWDS mode. Therefore, an EWEN instruction must be
performed before any ERASE or WRITE instruction
can be executed.
FIGURE 3-1:
SYNCHRONOUS DATA TIMING
CS
VIH
VIL
VIH
VIL
VIH
VIL
VOH
VOL
VOH
VOL
CLK
DI
DO
(READ)
DO
(PROGRAM)
TCSS
TDIS
TCKH
TCKL
TDIH
TPD
TCSH
TPD
TCZ
STATUS VALID
TSV
TCZ
Note:
AC Test Conditions: VIL = 0.4V, VIH = 2.4V.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93C66ATESNG | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:4K Microwire Compatible Serial EEPROM |
| 93C66ATEST | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:4K Microwire Compatible Serial EEPROM |
| 93C66ATESTG | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:4K Microwire Compatible Serial EEPROM |
| 93C66AT-I/CH | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K-16K Microwire Compatible Serial EEPROMs |
| 93C66AT-I/MC | 功能描述:電可擦除可編程只讀存儲器 4K 512X8 SER EE IND RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
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