- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄42435 > 93C66A-TE/STG 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 PDF資料下載
參數(shù)資料
| 型號(hào)： | 93C66A-TE/STG |
| 元件分類： | PROM |
| 英文描述： | 512 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 封裝： | 4.40 MM, LEAD FREE, PLASTIC, MO-153, TSSOP-8 |
| 文件頁(yè)數(shù)： | 8/38頁(yè) |
| 文件大?。?/td> | 703K |
| 代理商： | 93C66A-TE/STG |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)第5頁(yè)第6頁(yè)第7頁(yè)當(dāng)前第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)第14頁(yè)第15頁(yè)第16頁(yè)第17頁(yè)第18頁(yè)第19頁(yè)第20頁(yè)第21頁(yè)第22頁(yè)第23頁(yè)第24頁(yè)第25頁(yè)第26頁(yè)第27頁(yè)第28頁(yè)第29頁(yè)第30頁(yè)第31頁(yè)第32頁(yè)第33頁(yè)第34頁(yè)第35頁(yè)第36頁(yè)第37頁(yè)第38頁(yè)
93XX46X/56X/66X/76X/86X
DS21929A-page 16
2005 Microchip Technology Inc.
3.9
WRITE ALL (WRAL)
The Write All (WRAL) instruction will write the entire
memory array with the data specified in the command.
For 93AAXX and 93LCXX devices, after the last data
bit is clocked into DI, the falling edge of CS initiates the
self-timed auto-erase and programming cycle. For
93CXX devices, the self-timed auto-erase and pro-
gramming cycle is initiated by the rising edge of CLK on
the last data bit. Clocking of the CLK pin is not neces-
sary after the device has entered the WRAL cycle. The
WRAL command does include an automatic ERAL
cycle for the device. Therefore, the WRAL instruction
does not require an ERAL instruction, but the chip must
be in the EWEN status.
The DO pin indicates the Ready/Busy status of the
device if CS is brought high after a minimum of 250 ns
low (TCSL).
VCC must be
≥ 4.5V for proper operation of WRAL.
FIGURE 3-10:
WRAL TIMING FOR 93AAXX AND 93LCXX DEVICES
FIGURE 3-11:
WRAL TIMING FOR 93CXX DEVICES
Note:
For devices with PE functionality such as
the 93XX76C or 93XX86C, the write
sequence requires a logic low signal on
the PE pin prior to the rising edge of the
last data bit.
Note:
After the Write All cycle is complete,
issuing a Start bit and then taking CS low
will clear the Ready/Busy status from DO.
CS
CLK
DI
DO
HIGH-Z
1
0
01
X
X
Dx
D0
High-Z
Busy
Ready
TWL
VCC must be
≥ 4.5V for proper operation of WRAL.
TCSL
TSV
TCZ
CS
CLK
DI
DO
HIGH-Z
1
0
01
X
X
Dx
D0
High-Z
Busy
Ready
TWL
TCSL
TSV
TCZ
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 93C66B-TE/MS | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93C66C-TI/STG | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC86C-TE/SNG | 1K X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
| 93LC46A-TE/OTGX | 128 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO6 |
| 93LC46A-TI/STG | 128 X 8 MICROWIRE BUS SERIAL EEPROM, PDSO8 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 93C66AT-I/CH | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:1K-16K Microwire Compatible Serial EEPROMs |
| 93C66AT-I/MC | 功能描述:電可擦除可編程只讀存儲(chǔ)器 4K 512X8 SER EE IND RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93C66AT-I/MCG | 制造商:MICROCHIP 制造商全稱:Microchip Technology 功能描述:4K Microwire Compatible Serial EEPROM |
| 93C66AT-I/MNY | 功能描述:電可擦除可編程只讀存儲(chǔ)器 4K 512 X 8 SERIAL EE IND RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
| 93C66AT-I/MS | 功能描述:電可擦除可編程只讀存儲(chǔ)器 512x8 RoHS:否 制造商:Atmel 存儲(chǔ)容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時(shí)鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。