參數(shù)資料
型號: 93C56AMS
廠商: Microchip Technology Inc.
英文描述: IGBT Module; Continuous Collector Current, Ic:30A; Collector Emitter Saturation Voltage, Vce(sat):2.1V; Power Dissipation, Pd:60.6W; Collector Current:30A; Collector Emitter Voltage, Vceo:600V; Package/Case:DIP-41
中文描述: 2K微絲兼容串行EEPROM
文件頁數(shù): 16/24頁
文件大小: 405K
代理商: 93C56AMS
93AA56A/B/C, 93LC56A/B/C, 93C56A/B/C
DS21794B-page 16
2003 Microchip Technology Inc.
8-Lead Plastic Small Outline (SN) – Narrow, 150 mil (SOIC)
Foot Angle
Lead Thickness
φ
c
0
4
8
0
4
8
15
12
0
15
12
0
β
Mold Draft Angle Bottom
* Controlling Parameter
§ Significant Characteristic
15
12
0
15
12
0
α
Mold Draft Angle Top
0.51
0.42
0.33
.020
.017
.013
B
Lead Width
0.25
0.23
0.20
.010
.009
.008
0.76
0.62
0.48
.030
.025
.019
L
Foot Length
0.51
0.38
0.25
.020
.015
.010
h
Chamfer Distance
5.00
4.90
4.80
.197
.193
.189
D
Overall Length
3.99
3.91
3.71
.157
.154
.146
E1
Molded Package Width
6.20
6.02
5.79
.244
.237
.228
E
Overall Width
0.25
0.18
0.10
.010
.007
.004
A1
Standoff
§
1.55
1.42
1.32
.061
.056
.052
A2
Molded Package Thickness
1.75
1.55
1.35
.069
.061
.053
A
Overall Height
1.27
.050
p
Pitch
8
8
n
Number of Pins
MAX
NOM
MIN
MAX
NOM
MIN
Dimension Limits
MILLIMETERS
INCHES*
Units
2
1
D
n
p
B
E
E1
h
L
β
c
45
°
φ
A2
α
A
A1
Notes:
Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed
.010” (0.254mm) per side.
JEDEC Equivalent: MS-012
Drawing No. C04-057
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