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    參數(shù)資料
    型號: 93AA76C-TI/MC
    元件分類: PROM
    英文描述: 512 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
    封裝: 2 X 3 MM, 0.90 MM HEIGHT, LEAD FREE, PLASTIC, MO-229VCED-2, DFN-8
    文件頁數(shù): 28/28頁
    文件大?。?/td> 474K
    代理商: 93AA76C-TI/MC
    2005 Microchip Technology Inc.
    DS21796G-page 9
    93AA76A/B/C, 93LC76A/B/C, 93C76A/B/C
    2.8
    Write
    The WRITE instruction is followed by 8 bits (if ORG is
    low or A-version devices) or 16 bits (if ORG pin is high
    or B-version devices) of data which are written into the
    specified address. The self-timed auto-erase and
    programming cycle is initiated by the rising edge of CLK
    on the last data bit.
    The DO pin indicates the Ready/Busy status of the
    device, if CS is brought high after a minimum of 250 ns
    low (TCSL). DO at logical ‘0’ indicates that programming
    is still in progress. DO at logical ‘1’ indicates that the
    register at the specified address has been written with
    the data specified and the device is ready for another
    instruction.
    FIGURE 2-6:
    WRITE TIMINGS
    Note:
    The write sequence requires a logic high
    signal on the PE pin prior to the rising
    edge of the last data bit.
    Note:
    After the Write cycle is complete, issuing a
    Start bit and then taking CS low will clear
    the Ready/Busy status from DO.
    CS
    CLK
    DI
    DO
    1
    0
    1
    An
    A0
    Dx
    D0
    Busy
    Ready
    High-Z
    TWC
    TCSL
    TCZ
    TSV
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