參數(shù)資料
型號: 935270456518
廠商: NXP SEMICONDUCTORS
元件分類: 電源管理
英文描述: 4-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO20
封裝: 4.40 MM, PLASTIC, SOT-163, TSOP-20
文件頁數(shù): 9/10頁
文件大?。?/td> 158K
代理商: 935270456518
Philips Semiconductors
Product data
NE57605
Lithium-ion battery protector for
3 or 4 cell battery packs
2001 Oct 03
8
The R-C filters around the NE57605
One needs to place R-C filters on the positive input pins of the
NE57605. These are primarily to shield the IC from electrostatic
occurrences and spikes on the terminals of the battery pack. A
secondary need is during the occurrence of a short-circuit across
the battery pack terminals. Here, the Li-ion cell voltage could
collapse and cause the IC to enter an unpowered state. The R-Cs
then provide power during the first instance of the short circuit and
allow the IC to turn OFF the discharge MOSFET. The IC can then
enter an unpowered state. Lastly, the R-C filter on the node between
the cells filters any noise voltage caused by noisy load current.
The value of 330
and 0.1 F are good for the VCC and VC4 pins.
Values of 1 k
and 0.1 F are good for the VC1, VC2 and VC3 pins.
Selecting the optimum MOSFETs
For a 3- or 4-cell battery pack, a standard MOSFET should be used.
These MOSFETs have turn-on thresholds of 2.5 V and are
considered full-on at 10 V VGS. The total 4-cell pack voltage will be
a maximum of 17.2 V, which is within safe operating range of the
gate voltage which is typically around 20 volts.
The MOSFETs should have a voltage rating greater than 30 V and
should have a high avalanche rating to survive any spikes
generated across the battery pack terminals.
The current rating of the MOSFETs should be greater than four
times the maximum “C-rating” of the cells. The current rating,
though, is more defined by the total series resistance of the battery
pack. The total resistance of the battery pack is given by Equation 1.
Rbat(tot) = 2(RDS(on)) + 4Rcell
(Equation 1)
The total pack resistance is typically determined by the system
requirements. The total pack resistance directly determines how
much voltage droop will occur during pulses in load current.
Another consideration is the forward-biased safe operating area of
the MOSFET. During a short-circuit, the discharge current can easily
reach 10–15 times the “C-rating” of the cells. The MOSFET must
survive this current prior to the discharge MOSFET can be turned
OFF. So having an FBSOA envelope that exceeds 20 amperes for
5 ms would be safe.
The Charge MOSFET circuit
The NE57605 uses an isolated charge MOSFET drive arrangement.
This is to help keep ESD charges from entering the IC. The charge
MOSFET is normally ON until turned off by the IC. The CF pin uses
a current source to drive an external NPN transistor to turn OFF the
charge FET. If a charge has poor “compliance” or the no load
voltage of the charge can rise significantly above the rating of the
battery pack. This condition causes the source of the charge FET to
go very negative compared to the cell GND voltage after the charge
FET opens. This design allows the charge FET gate drive to “float”
down to this very negative voltage without upsetting the operation of
the IC.
PACKING METHOD
SL01305
TAPE DETAIL
COVER TAPE
CARRIER TAPE
REEL
ASSEMBLY
TAPE
GUARD
BAND
BARCODE
LABEL
BOX
Figure 7. Tape and reel packing method.
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