2002 Nov 15
2
Philips Semiconductors
Product specication
Single 2-input OR gate
74LVC1G32
FEATURES
Wide supply voltage range from 1.65 to 5.5 V
High noise immunity
Complies with JEDEC standard:
– JESD8-7 (1.65 to 1.95 V)
– JESD8-5 (2.3 to 2.7 V)
– JESD8B/JESD36 (2.7 to 3.6 V).
±24 mA output drive (VCC = 3.0 V)
CMOS low power consumption
Latch-up performance exceeds 250 mA
Direct interface with TTL levels
Inputs accept voltages up to 5 V
Multiple package options
ESD protection:
HBM EIA/JESD22-A114-A exceeds 2000 V
MM EIA/JESD22-A115-A exceeds 200 V
Specified from 40 to +125 °C.
DESCRIPTION
The 74LVC1G32 is a high-performance, low-power,
low-voltage, Si-gate CMOS device, superior to most
advanced CMOS compatible TTL families.
Input can be driven from either 3.3 or 5 V devices. This
feature allow the use of these devices in a mixed
3.3 and 5 V environment.
Schmitt-trigger action at all inputs makes the circuit
tolerant for slower input rise and fall time.
This device is fully specified for partial power-down
applications using Ioff. The Ioff circuitry disables the output,
preventing the damaging backflow current through the
device when it is powered down.
The 74LVC1G32 provides the single 2-input OR function.
QUICK REFERENCE DATA
GND = 0 V; Tamb =25 °C; tr =tf ≤ 2.5 ns.
Notes
1. CPD is used to determine the dynamic power dissipation (PD in W).
PD =CPD × VCC2 × fi × N+ Σ(CL × VCC2 × fo) where:
fi = input frequency in MHz;
fo = output frequency in MHz;
CL = output load capacitance in pF;
VCC = supply voltage in Volts;
N = total switching outputs;
Σ(CL × VCC2 × fo) = sum of the outputs.
2. The condition is VI = GND to VCC.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
tPHL/tPLH
propagation delay
inputs A, B to output Y
VCC = 1.8 V; CL = 30 pF; RL =1k
3.1
ns
VCC = 2.5 V; CL = 30 pF; RL = 500
2.1
ns
VCC = 2.7 V; CL = 50 pF; RL = 500
2.5
ns
VCC = 3.3 V; CL = 50 pF; RL = 500
2.1
ns
VCC = 5.0 V; CL = 50 pF; RL = 500
1.7
ns
CI
input capacitance
5
pF
CPD
power dissipation capacitance per buffer
VCC = 3.3 V; notes 1 and 2
16
pF