1999 Apr 08
25
Philips Semiconductors
Product specication
Speech and loudspeaker amplier IC with
auxiliary inputs/outputs and analog multiplexer
TEA1097
Logic inputs (pins HFC, AUXC, MUTT and MUTR)
VIL
LOW-level input voltage
0.4
+0.3
V
VIH
HIGH-level input voltage
1.8
VBB + 0.4 V
Ii
input current
for pins HFC and AUXC
36
A
for pins MUTT and MUTR
2.5
6
A
Base microphone amplier (pins TXIN, TXOUT and GATX); see note 1
Gv(TXIN-TXOUT)
voltage gain from pin TXIN to
TXOUT
VTXIN = 3 mV (RMS);
RGATX = 30.1 k
13.15
14.85
16.55
dB
Gv
voltage gain adjustment with
RGATX
15
+16
dB
G
v(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
±0.1
dB
G
v(T)
gain variation with temperature
referenced to 25
°C
Tamb = 25 to +75 °C
±0.15
dB
Vno(TXOUT)(rms)
noise output voltage at pin
TXOUT; pin TXIN is shorted
through 200
in series with
10
F to GNDTX (RMS value)
psophometrically
weighted (p53 curve)
101
dBVp
Gv(mute)
gain reduction if not activated
HFC = HIGH;
MUTT = LOW;
MUTR = LOW;
AUXC = LOW
60
80
dB
Loudspeaker amplier (pins HFRX, LSAO, GALS and VOL); see note 1
Gv(HFRX-LSAO)
voltage gain from pin HFRX to
LSAO
VHFRX = 20 mV (RMS);
RGALS = 255 k
25.5
28
30.5
dB
G
v
voltage gain adjustment with
RGALS
28
+7
dB
Gv(f)
gain variation with frequency
referenced to 1 kHz
f = 300 to 3400 Hz
±0.3
dB
G
v(T)
gain variation with temperature
referenced to 25
°C
Tamb = 25 to +75 °C
±0.3
dB
G
v(vol)
voltage gain variation related to
RVOL = 1.9 k
3
dB
V(HFRX)(rms)(max) maximum input voltage at pin
HFRX (RMS value)
Iline = 70 mA;
RGALS =33k; for 2%
THD in the input stage
580
mV
Vno(LSAO)(rms)
noise output voltage at pin
LSAO; pin HFRX is open-circuit
(RMS value)
psophometrically
weighted (p53 curve)
79
dBVp
VLSAO(rms)
output voltage (RMS value)
without external supply on pin
ESI
IBB = 0 mA; IDD =1mA
Iline =18mA
0.9
V
Iline =30mA
1.2
V
Iline >50mA
1.6
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT