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參數(shù)資料
| 型號(hào)： | 935264185118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 門電路 |
| 英文描述： | AHCT/VHCT SERIES, 8-INPUT NAND GATE, PDSO14 |
| 封裝： | SOT-402-1, TSSOP-14 |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 103K |
| 代理商： | 935264185118 |
December 1990
2
Philips Semiconductors
Product specication
8-input NAND gate
74HC/HCT30
FEATURES
Output capability: standard
ICC category: SSI
GENERAL DESCRIPTION
The 74HC/HCT30 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL).
They are specified in compliance with JEDEC standard no. 7A.
The 74HC/HCT30 provide the 8-input NAND function.
QUICK REFERENEC DATA
GND = 0 V; Tamb =25 °C; tr =tf =6ns
Notes
1. CPD is used to determine the dynamic power dissipation (PD in W):
PD =CPD × VCC2 × fi +∑ (CL × VCC2 × fo) where:
fi = input frequency in MHz
fo = output frequency in MHz
∑ (CL × VCC2 × fo) = sum of outputs
CL = output load capacitance in pF
VCC = supply voltage in V
2. For HC the condition is VI = GND to VCC
For HCT the condition is VI = GND to VCC 1.5 V
ORDERING INFORMATION
See
“74HC/HCT/HCU/HCMOS Logic Package Information”.
SYMBOL
PARAMETER
CONDITIONS
TYPICAL
UNIT
HC
HCT
tPHL/ tPLH
propagation delay A, B, C, D, E, F, G, H to Y
CL = 15 pF; VCC = 5 V
12
ns
CI
input capacitance
3.5
pF
CPD
power dissipation capacitance per gate
notes 1 and 2
15
pF
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