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參數(shù)資料
| 型號： | 935264068118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 編、解碼器及復(fù)用、解復(fù)用 |
| 英文描述： | DUAL 2 LINE TO 1 LINE MULTIPLEXER, TRUE OUTPUT, PDSO14 |
| 封裝： | 4.40 MM, PLASTIC, MO-153, SOT-402-1, TSSOP-14 |
| 文件頁數(shù)： | 14/14頁 |
| 文件大小： | 116K |
| 代理商： | 935264068118 |
Philips Semiconductors
Product data
PCA9542
2-channel I2C multiplexer and interrupt logic
2002 Mar 28
9
ABSOLUTE MAXIMUM RATINGS1, 2
In accordance with the Absolute Maximum Rating System (IEC 134).Voltages are referenced to GND (ground = 0 V).
SYMBOL
PARAMETER
CONDITIONS
RATING
UNIT
VDD
DC supply voltage
–0.5 to +7.0
V
VI
DC input voltage
–0.5 to +7.0
V
II
DC input current
±20
mA
IO
DC output current
±25
mA
IDD
Supply current
±100
mA
ISS
Supply current
±100
mA
Ptot
total power dissipation
400
mW
Tstg
Storage temperature range
–60 to +150
°C
Tamb
Operating ambient temperature
–40 to +85
°C
NOTES:
1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the
device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to
absolute-maximum-rated conditions for extended periods may affect device reliability.
2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150
°C.
DC CHARACTERISTICS
VDD = 2.3 to 3.6 V; VSS = 0 V; Tamb = –40 to +85 °C; unless otherwise specified. (See page 10 for VDD = 3.6 to 5.5 V.)
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNIT
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
Supply
VDD
Supply voltage
2.3
3.6
V
IDD
Supply current
Operating mode; VDD = 3.6 V;
no load; VI = VDD or VSS;
fSCL = 100 kHz
–
160
200
A
Istb
Standby current
Standby mode; VDD = 3.6 V;
no load; VI = VDD or VSS; fSLC = 0 KHz
–
25
100
A
VPOR
Power-on reset voltage
no load; VI = VDD or VSS
–
1.6
2.1
V
Input SCL; input/output SDA
VIL
LOW level input voltage
–0.5
–
0.3 VDD
V
VIH
HIGH level input voltage
0.7 VDD
–
6
V
IOL
LOW level output current
VOL = 0.4 V
3
–
mA
IOL
LOW level out ut current
VOL = 0.6 V
6
–
mA
IL
Leakage current
VI = VDD or VSS
–1
–
+1
A
Ci
Input capacitance
VI = VSS
–
9
10
pF
Select inputs A0, A1, A2, INT0, INT1
VIL
LOW level input voltage
–0.5
–
+0.3 VDD
V
VIH
HIGH level input voltage
0.7 VDD
–
VDD + 0.5
V
ILI
Input leakage current
VI = VDD or VSS
–1
–
+1
A
Ci
Input capacitance
VI = VSS
–
1.6
3
pF
Pass Gate
RON
Switch resistance
VCC = 3.0 to 3.6 V, VO = 0.4 V, IO = 15 mA
5
20
30
RON
Switch resistance
VCC = 2.3 to 2.7 V, VO = 0.4V, IO = 10 mA
7
26
55
Vswin = VDD = 3.3 V; Iswout = –100 A
2.2
VP
Switch output voltage
Vswin = VDD = 3.0 to 3.6 V; Iswout = –100 A
1.6
2.8
V
VPass
Switch out ut voltage
Vswin = VDD = 2.5 V; Iswout = –100 A
1.5
V
Vswin = VDD = 2.3 to 2.7 V; Iswout = –100 A
1.1
2.0
IL
Leakage current
VI = VDD or VSS
–1
–
+1
A
Cio
Input/output capacitance
VI = VSS
–
3
5
pF
INT Output
IOL
LOW level output current
VOL = 0.4 V
3
–
mA
IOH
HIGH level output current
—
–
+100
A
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