參數(shù)資料
型號: 935263906512
廠商: NXP SEMICONDUCTORS
元件分類: 通信及網(wǎng)絡
英文描述: SPECIALTY TELECOM CIRCUIT, PDSO24
封裝: PLASTIC, SOT-355-1, TSSOP-24
文件頁數(shù): 25/32頁
文件大?。?/td> 222K
代理商: 935263906512
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Information as of 2001-06-12
SA3600; Low voltage dual-band RF front-end
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Description
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The SA3600 is an integrated dual-band RF front-end that operates at both cellular (AMPS and
TDMA) and PCS (TDMA) frequencies, and is designed in a 20 GHz fT BiCMOS process--QUBiC2.
The low-band (LB) receiver is a combined low-noise amplifier (LNA) and mixer. The LNA has a 1.7
dB noise figure (NF) at 881 MHz with 17 dB of gain and an IIP3 of -7 dBm. The wide-dynamic range
mixer has a 9.5 dB NF at 881 MHz with 9.5 dB of gain and an IIP3 of +6 dBm.
The high-band (HB) receiver is a combined low-noise amplifier (LNA) and mixer, with the low-band
and high-band mixers sharing the same mixer output. The LNA has a 2.2 dB NF at 1960 MHz with
16 dB of gain and an IIP3 of -5 dBm. The wide-dynamic range mixer has a 8.5 dB NF at 1960 MHz
with 8.5 dB of gain and an IIP3 of +5.5 dBm.
Features
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Low current consumption: LB ICC = 14.5 mA; HB ICC = 20.5 mA
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Outstanding low- and high-band noise figure
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LNAs with gain control (30 dB gain step)
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LO input and output buffers
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Selectable frequency doubler
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On chip logic for network selection and power down
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Very small outline package
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Applications
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800 to 1000 MHz analog and digital receivers
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1800 to 2000 MHz digital receivers
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Portable radios
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Mobile communications equipment
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Datasheet
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Datasheet
Philips Semiconductors: Product information on SA3600, Low voltage dual-band RF front-end
file:///E|/export/projects/bitting2/imaging/BITTING/mail_pdf/cpl_images/sa3600dh.HTML (1 of 2) [7/17/2001 6:15:40 PM]
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