Philips Semiconductors
Product specification
SA2421
2.45 GHz low voltage RF transceiver
2000 Mar 13
4
AC ELECTRICAL CHARACTERISTICS
VCC = +3 V, Tamb = 25°C; LOIN = –10 dBm @ 2.1 GHz; fRF = 2.45 GHz; unless otherwise stated.
SYMBOL
PARAMETER
TEST CONDITIONS
LIMITS
UNITS
SYMBOL
PARAMETER
TEST CONDITIONS
MIN
–3
σ
TYP
+3
σ
MAX
UNITS
fRF
RF frequency range3
2.4
2.45
2.5
GHz
fIF
IF frequency range3
300
350
400
MHz
LNA High gain mode (In = Pin 2; Out = 23)
S21
Amplifier gain
LNA gain = Hi
13.3
14.3
15.3
dB
S12
Amplifier reverse isolation
LNA gain = Hi
–32
dB
S11
Amplifier input match1
LNA gain = Hi
–10
dB
S22
Amplifier output match1
LNA gain = Hi
–9
dB
ISO
Isolation: LOX to LNAIN
LNA gain = Hi
–43
dB
P-1dB
Amplifier input 1dB gain compression
LNA gain = Hi
–15
dBm
IP3
Amplifier input third order intercept
f1 - f2 = 1 MHz,
LNA gain = Hi
–4.5
–3.2
–1.9
dBm
NF
Amplifier noise figure (50
)
LNA gain = Hi
3.1
3.2
3.3
dB
LNA High Overload Mode (low gain mode)
S21
Amplifier gain
LNA gain = Low
–18.5
–19.4
–20.3
dB
S12
Amplifier reverse isolation
LNA gain = Low
–26
dB
S11
Amplifier input match1
LNA gain = Low
–8
dB
S22
Amplifier output match1
LNA gain = Low
–8
dB
ISO
Isolation: LOX to LNAIN
LNA gain = Low
–45
dB
P-1dB
Amplifier input 1dB gain compression
LNA gain = Low
2
dBm
IP3
Amplifier input third order intercept
f1 – f2 = 1 MHz,
LNA gain = Low
18
dBm
NF
Amplifier noise figure (50
)
LNA gain = Low
18.5
dB
Rx Mixer (Rx IN = Pin 19, IF = Pins 5 and 6, LO = Pin 10 or 12, PLO = –10 dBm)
PGC
Power conversion gain into 50
:
matched to 50
W using external balun
circuitry.
fS = 2.45 GHz,
fLO = 2.1 GHz,
fIF = 350 MHz
9.5
10
10.5
dB
S11–RF
Input match at RF (2.45 GHz)1
–11
dB
NFM
SSB noise figure (2.45 GHz) (50
)
9.8
11.2
12.5
dB
P-1dB
Mixer input 1 dB gain compression
–10.5
dBm
IP3
Input third order intercept
f1 – f2 = 1MHz
1.8
2.2
2.6
dBm
Rx Mixer Spurious Components (PIN = P-1dB)
PRF-IF
RF feedthrough to IF4
CL = 2 pF per side
-35
dBc
PLO-IF
LO feedthrough to IF5
CL = 2 pF per side
-32
dBc