參數(shù)資料
型號(hào)： 935263551518
廠商： NXP SEMICONDUCTORS
元件分類： 上/下變頻器
英文描述： RF/MICROWAVE DOWN CONVERTER
封裝： PLASTIC, SSOP-24
文件頁(yè)數(shù)： 17/18頁(yè)
文件大小： 112K
代理商： 935263551518
1999 Nov 11
8
Philips Semiconductors
Product specication
Satellite ZERO-IF QPSK down-converter
TDA8060TS
Notes
1. Measured in baseband (at pin IOUT or pin QOUT) on a carrier at 2 MHz and 25 dBmV.
2. Quadrature error with respect to 90
°.
3. The differential input impedance of the IC is 34
in series with the IC pins which give an inductance of 5 nH.
For optimum performance, this inductance should be cancelled by a matching network. Coupling capacitors of 1 pF
give an acceptable result.
4. Gain = Vo(dB) Vi(dB) (see Fig.3). Gain for symmetrical RF input
5. Gain = Vo(dB) Vi(dB) (see Fig.3). Gain for asymmetrical RF input
B(1dB)
channel
1 dB bandwidth
40
65
MHz
B(3dB)
channel
3 dB bandwidth
70
100
MHz
Zo
output impedance
50
Vo(p-p)
nominal output voltage level
750
mV
Ro(L)
resistive load at output
400
Overall with a 100 nF capacitor instead of LP1 and LP2
td(g)(I-Q)(40)
group delay mismatch in 40 MHz band
between I and Q
0.5
2
ns
td(g)(I-Q)(R40)
group delay ripple in 40 MHz band for I or Q
0.5
1
ns
Gv(I-Q)(40)
voltage gain mismatch in 40 MHz band
between I and Q
1dB
GR(I-Q)(40)
voltage gain ripple in 40 MHz band for I or Q
1dB
SYMMETRICAL RF INPUT
Gv(RF-IBBOUT)(min)
minimum voltage gain from RF input to
pin IBBOUT
VAGC = 0.1 x VCC
19
dB
Gv(RF-IBBOUT)(max)
maximum voltage gain from RF input to
pin IBBOUT
VAGC = 0.9 x VCC
48
49
dB
Gv(RF-QBBOUT)(min)
minimum voltage gain from RF input to
pin QBBOUT
VAGC = 0.1 x VCC
19
dB
Gv(RF-QBBOUT)(max) maximum voltage gain from RF input to
pin QBBOUT
VAGC = 0.9 x VCC
48
49
dB
Fi
noise gure at maximum gain
VAGC = 0.9 x VCC;
Zsource =50
13
16
dB
ASYMMETRICAL RF INPUT
Gv(RF-IBBOUT)(min)
minimum voltage gain from RF input to
pin IBBOUT
VAGC = 0.1 x VCC
19
dB
Gv(RF-IBBOUT)(max)
maximum voltage gain from RF input to
pin IBBOUT
VAGC = 0.9 x VCC
49
dB
Gv(RF-QBBOUT)(min)
minimum voltage gain from RF input to
pin QBBOUT
VAGC = 0.1 x VCC
19
dB
Gv(RF-QBBOUT)(max) maximum voltage gain from RF input to
pin QBBOUT
VAGC = 0.9 x VCC
49
dB
Fi
noise gure at maximum gain
VAGC = 0.9 x VCC;
Zsource =50
14
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
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