2000 Mar 21
16
Philips Semiconductors
Product specication
Low voltage telephone transmission circuit with
dialler interface and regulated strong supply
TEA1114A
Transmit stage (pins MIC+, MIC
and DTMF)
MICROPHONE AMPLIFIER (PINS MIC+ AND MIC
)
Zi
input impedance
differential between
pins MIC+ and MIC
68
k
single-ended between
pins MIC+/MIC
and V
EE
34
k
Gv(TX)
voltage gain from
pins MIC+/MIC
to pin LN
VMIC = 4 mV (RMS)
43.2
44.2
45.2
dB
Gv(TX)(f)
voltage gain variation with
frequency referred to 1 kHz
f = 300 to 3400 Hz
±0.2
dB
G
v(TX)(T)
voltage gain variation with
temperature referred to 25
°C
Tamb = 25 to +75 °C
±0.3
dB
CMRR
common mode rejection ratio
80
dB
VLN(max)(rms)
maximum sending signal
(RMS value)
Iline = 15 mA; THD = 2%
1.8
2.15
V
Iline = 4 mA; THD = 10%
0.35
V
Vno(LN)
noise output voltage at pin LN psophometrically
weighted (P53 curve);
pins MIC+/ MIC
shorted
through 200
78
dBmp
DTMF AMPLIFIER (PIN DTMF)
Z
i
input impedance
21
k
Gv(DTMF)
voltage gain from pin DTMF to
pin LN
VDTMF = 20 mV (RMS);
MUTE = LOW
25
26
27
dB
G
v(DTMF)(f)
voltage gain variation with
frequency referred to 1 kHz
f = 300 to 3400 Hz
±0.2
dB
Gv(DTMF)(T)
voltage gain variation with
temperature referred to 25
°C
Tamb = 25 to +75 °C
±0.4
dB
Gv(ct)
voltage gain from pin DTMF to
pin RX (condence tone)
VDTMF = 20 mV (RMS);
RL2 =10k;
MUTE = LOW
9.2
dB
Receiving stage (pins IR, RX, GAR and QR)
THE RECEIVE AMPLIFIER (PINS IR AND RX)
Z
i
input impedance
21.5
k
Gv(RX)
voltage gain from pin IR to
pin RX
VIR = 4 mV (RMS)
32.4
33.4
34.4
dB
Gv(RX)(f)
voltage gain variation with
frequency referred to 1 kHz
f = 300 to 3400 Hz
±0.2
dB
Gv(RX)(T)
voltage gain variation with
temperature referred to 25
°C
Tamb = 25 to +75 °C
±0.3
dB
VRX(max)(rms)
maximum receiving signal on
pin RX (RMS value)
IP = 0 mA; sine wave
drive; RL2 =10k;
THD=2%
0.4
V
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT