參數(shù)資料
型號: 935262598026
廠商: NXP SEMICONDUCTORS
元件分類: 通信及網(wǎng)絡(luò)
英文描述: SPECIALTY TELECOM CIRCUIT, UUC13
封裝: DIE-13
文件頁數(shù): 10/26頁
文件大小: 258K
代理商: 935262598026
2000 Mar 29
18
Philips Semiconductors
Product specication
SDH/SONET STM4/OC12
transimpedance amplier
TZA3023
BONDING PAD LOCATIONS
Note
1. All coordinates are referenced, in
m, to the bottom
left-hand corner of the die.
SYMBOL
PAD
COORDINATES(1)
xy
DREF
1
95
881
GND
2
95
618
GND
3
95
473
IPhoto
4
95
285
GND
5
215
95
GND
6
360
95
GND
7
549
95
GND
8
691
95
OUT
9
785
501
OUTQ
10
785
641
VCC
11
567
1055
VCC
12
424
1055
AGC
13
259
1055
TZA3023U
1
10
9
2
3
4
5
0
x
y
0
13
12
11
67
8
1300
m
1030
m
DREF
IPhoto
GND
OUTQ
OUT
MCD897
GND
AGC
V
CC
V
CC
GND
Fig.22 Bonding pad locations of the TZA3023U.
Physical characteristics of the bare die
PARAMETER
VALUE
Glass passivation
2.1
m PSG (PhosphoSilicate Glass) on top of 0.65 m oxynitride
Bonding pad dimension
minimum dimension of exposed metallization is 90
× 90 m (pad size = 100 × 100 m)
Metallization
1.22
m W/AlCu/TiW
Thickness
380
m nominal
Size
1.03
× 1.30 mm (1.34 mm2)
Backing
silicon; electrically connected to GND potential through substrate contacts
Attach temperature
<440
°C; recommended die attach is glue
Attach time
<15 s
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