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參數(shù)資料
| 型號： | 935262194112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 消費家電 |
| 英文描述： | SPECIALTY CONSUMER CIRCUIT, PZIP13 |
| 封裝： | POWER, PLASTIC, SOT-141-6, DIL-BENT-SIL, 13 PIN |
| 文件頁數(shù)： | 11/18頁 |
| 文件大?。?/td> | 149K |
| 代理商： | 935262194112 |
January 1995
2
Philips Semiconductors
Preliminary specication
DC-coupled vertical deection and
East-West output circuit
TDA8350Q
FEATURES
Few external components
Highly efficient fully DC-coupled vertical output bridge
circuit
Vertical flyback switch
Guard circuit
Protection against:
– short-circuit of the output pins
– short-circuit of the output pins to VP
High EMC immunity due to common mode inputs
Temperature (thermal) protection
East-West output stage with one single conversion
resistor.
GENERAL DESCRIPTION
The TDA8350Q is a power circuit for use in 90
° and 110°
colour deflection systems for field frequencies of 50
to 120 Hz. The circuit provides a DC driven vertical
deflection output circuit, operating as a highly efficient
class G system and an East-West driver for sinking the
diode modulator current.
QUICK REFERENCE DATA
Note
1. A flyback supply voltage of
>50 V up to 60 V is allowed in application. A 220 nF capacitor in series with a 22 resistor
(dependent on IO and the inductance of the coil) has to be connected between pin 7 and ground. The decoupling
capacitor of VFB has to be connected between pin 8 and pin 4. This supply voltage line must have a resistance of
33
(see application circuit Fig.5).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
DC supply
VP
supply voltage
9
25
V
IP
quiescent current
30
mA
Vertical circuit
IO(p-p)
output current (peak-to-peak value)
3A
Idiff(p-p)
differential input current
(peak-to-peak value)
600
A
Vdiff(p-p)
differential input voltage
(peak-to-peak value)
1.5
1.8
V
Flyback switch
IM
peak output current
±1.5
A
VFB
yback supply voltage
50
V
note 1
60
V
East-West amplier
IO(sink)
output current (sink only)
500
mA
VO(sink)
peak output voltage
IO(sink) =10 A
40
V
Ibias
input bias current
1
A
Thermal data (in accordance with IEC 747-1)
Tstg
storage temperature
65
150
°C
Tamb
operating ambient temperature
25
+75
°C
Tvj
virtual junction temperature
150
°C
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