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參數(shù)資料
| 型號(hào)： | 935260050112 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 多路復(fù)用及模擬開關(guān) |
| 英文描述： | QUAD 1-CHANNEL, SGL POLE SGL THROW SWITCH, PDSO14 |
| 封裝： | PLASTIC, SOT-108, SO-14 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大小： | 85K |
| 代理商： | 935260050112 |
January 1995
3
Philips Semiconductors
Product specication
Quadruple bilateral switches
HEF4066B
gates
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
DC CHARACTERISTICS
Tamb =25 °C
Power dissipation per switch
P
max.
100
mW
For other RATINGS see Family Specications
VDD
V
SYMBOL
MIN.
TYP.
MAX.
CONDITIONS
ON resistance
5
RON
350
2500
En at VDD
10
80
245
Vis =VSS to VDD
15
60
175
see Fig.4
ON resistance
5
RON
115
340
En at VDD
10
50
160
Vis =VSS
15
40
115
see Fig.4
ON resistance
5
RON
120
365
En at VDD
10
65
200
Vis =VDD
15
50
155
see Fig.4
‘
’ ON resistance
5
R
ON
25
En at VDD
between any two
10
10
Vis =VSS to VDD
channels
15
5
see Fig.4
OFF state leakage
5
IOZ
nA
En at VSS
current, any
10
nA
channel OFF
15
200 nA
En input voltage
5
VIL
2,25
1 V
Iis =10 A
see Fig.9
LOW
10
4,50
2 V
15
6,75
2 V
VDD
V
SYMBOL
Tamb (°c)
CONDITIONS
40
+25
+85
MAX.
Quiescent device
5
IDD
1,0
7,5
AVSS = 0; all valid
current
10
2,0
15,0
A
input combinations;
15
4,0
30,0
AVI =VSS or VDD
Input leakage current at En
15
± IIN
300
1000 nA
En at VSS or VDD
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