參數(shù)資料
型號: 935083210112
廠商: NXP SEMICONDUCTORS
元件分類: 無繩電話/電話
英文描述: TELEPHONE SPEECH CKT, PDSO16
封裝: PLASTIC, SOT-109, SO-16
文件頁數(shù): 30/30頁
文件大?。?/td> 281K
代理商: 935083210112
1997 Sep 03
9
Philips Semiconductors
Product specication
Low voltage transmission circuits with
dialler interface
TEA1062; TEA1062A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Notes
1. Mostly dependent on the maximum required Tamb and on the voltage between LN and SLPE (see Figs 6, 7 and 8).
2. Calculated for the maximum ambient temperature specified (Tamb =75 °C) and a maximum junction temperature of
125
°C.
HANDLING
This device meets class 2 ESD test requirements [Human Body Model (HBM)], in accordance with
“MIL STD 883C - method 3015”.
THERMAL CHARACTERISTICS
Note
1. Mounted on glass epoxy board 28.5
× 19.1 × 1.5 mm.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VLN
positive continuous line voltage
12
V
VLN(R)
repetitive line voltage during switch-on
or line interruption
13.2
V
VLN(RM)
repetitive peak line voltage for a 1 ms
pulse per 5 s
R9 = 20
; R10 = 13 ;
see Fig.18
28
V
Iline
line current
R9 = 20
; note 1
140
mA
VI
input voltage on all other pins
positive input voltage
VCC + 0.7
V
negative input voltage
0.7
V
Ptot
total power dissipation
R9 = 20
; note 2
TEA1062; TEA1062A
666
mW
TEA1062M1; TEA1062AM1
617
mW
TEA1062T; TEA1062AT
454
mW
Tamb
operating ambient temperature
25
+75
°C
Tstg
storage temperature
40
+125
°C
Tj
junction temperature
125
°C
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient in free air
TEA1062; TEA1062A
75
K/W
TEA1062M1; TEA1062AM1
81
K/W
TEA1062T; TEA1062AT (note 1)
110
K/W
相關(guān)PDF資料
PDF描述
935083210118 TELEPHONE SPEECH CKT, PDSO16
935083220112 TELEPHONE SPEECH CKT, PDSO16
935083220118 TELEPHONE SPEECH CKT, PDSO16
935151250112 TELEPHONE SPEECH CKT, PDIP16
935230190112 TELEPHONE SPEECH CKT, PDIP16
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