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參數(shù)資料
| 型號： | 935041730623 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 計數(shù)移位寄存器 |
| 英文描述： | F/FAST SERIES, 8-BIT RIGHT PARALLEL IN SERIAL OUT SHIFT REGISTER, TRUE OUTPUT, PDSO16 |
| 封裝： | 3.90 MM, PLASTIC, MS-012AC, SOT-109-1, SO-16 |
| 文件頁數(shù)： | 4/7頁 |
| 文件大?。?/td> | 107K |
| 代理商： | 935041730623 |
2002 May 17
4
Philips Semiconductors
Product specication
2-input AND gate
74HC1G08; 74HCT1G08
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Notes
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
2. Above 55
°C the value of P
D derates linearly with 2.5 mW/K.
SYMBOL
PARAMETER
CONDITIONS
74HC1G04
74HCT1G04
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
supply voltage
2.0
5.0
6.0
4.5
5.0
5.5
V
VI
input voltage
0
VCC
0
VCC
V
VO
output voltage
0
VCC
0
VCC
V
Tamb
operating ambient
temperature
see DC and AC
characteristics per
device
40
+25
+125
40
+25
+125
°C
tr,tf
input rise and fall times
VCC = 2.0 V
1000
ns
VCC = 4.5 V
500
500
ns
VCC = 6.0 V
400
ns
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
0.5
+7.0
V
IIK
input diode current
VI < 0.5 V or VI >VCC + 0.5 V; note 1
±20
mA
IOK
output diode current
VO < 0.5 V or VO >VCC + 0.5 V; note 1
±20
mA
IO
output source or sink current
0.5V<VO <VCC + 0.5 V; note 1
±12.5 mA
ICC
VCC or GND current
note 1
±25
mA
Tstg
storage temperature
65
+150
°C
PD
power dissipation per package
for temperature range from
40 to +125 °C;
note 2
200
mW
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