參數(shù)資料
型號： 934057138165
廠商： NXP SEMICONDUCTORS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 19.6 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝： PLASTIC, SMD, SC-74, 2 PIN
文件頁數(shù)： 5/12頁
文件大?。?/td> 62K
代理商： 934057138165
2002 Sep 02
2
Philips Semiconductors
Product specication
Quadruple ESD transient voltage suppressor
BZA418A
FEATURES
ESD rating >8 kV, according to IEC1000-4-2
SOT457 surface mount package
Common anode configuration
Non-clamping range 0.5 to 18 V
Maximum reverse peak power dissipation:
19.6 W at tp =1ms
Maximum clamping voltage at peak pulse current:
27 V at IZSM = 0.7 A.
APPLICATIONS
Computers and peripherals
Audio and video equipment
Communication systems
Medical equipment.
DESCRIPTION
Monolithic transient voltage suppressor diode in a six lead
SOT457 (SC-74) package for 4-bit wide ESD transient
suppression at 18 V level.
PINNING
PIN
DESCRIPTION
1
cathode 1
2
common
3
cathode 2
4
cathode 3
5
common
6
cathode 4
Fig.1 Simplified outline (SOT457) and symbol.
handbook, halfpage
13
2
4
5
6
1
3
4
6
2
5
Top view
MAM357
Marking code: L1.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Ts is the temperature at the soldering point of the anode pin.
2. DC working current limited by Ptot max.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per diode
IZ
working current
Ts =60 °C; note 1
note 2
mA
IF
continuous forward current
Ts =60 °C
100
mA
IFSM
non-repetitive peak forward
current
tp = 1 ms; square pulse
3.75
A
IZSM
non-repetitive peak reverse
current
tp = 1 ms; square pulse; see Fig.2
0.7
A
Ptot
total power dissipation
Ts =60 °C; see Fig.3
720
mW
PZSM
non repetitive peak reverse power
dissipation
square pulse; tp = 1 ms; see Fig.4
19.6
W
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
65
+150
°C
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