參數(shù)資料
型號: 934057100115
廠商: NXP SEMICONDUCTORS
元件分類: 二極管(射頻、小信號、開關、功率)
英文描述: 1 A, 20 V, SILICON, SIGNAL DIODE
封裝: PLASTIC, SMD, UMD2, URP, SC-76, 2 PIN
文件頁數(shù): 4/11頁
文件大小: 114K
代理商: 934057100115
2002 Dec 10
2
Philips Semiconductors
Product specication
Low VF MEGA Schottky barrier diode
PMEG2010EA
FEATURES
Forward current: 1 A
Reverse voltage: 20 V
Ultra high-speed switching
Very low forward voltage
Very small plastic SMD package.
APPLICATIONS
Ultra high-speed switching
Voltage clamping
Protection circuits.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
PINNING
PIN
DESCRIPTION
1
cathode
2
anode
olumns
ka
MAM283
Fig.1
Simplified outline (SOD323; SC-76) and
symbol.
Marking code: E1.
The marking bar indicates the cathode.
1
2
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
20
V
IF
continuous forward current
1A
IFSM
non-repetitive peak forward current
tp = 8.3 ms half sinewave;
JEDEC method
5A
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
125
°C
Tamb
operating ambient temperature
65
+125
°C
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