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參數(shù)資料
| 型號： | 934056984115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 24 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE |
| 封裝： | PLASTIC, SMD, UMT5, SC-88A, 5 PIN |
| 文件頁數(shù)： | 6/12頁 |
| 文件大小： | 86K |
| 代理商： | 934056984115 |
2002 Jan 11
3
Philips Semiconductors
Product specication
Quadruple ESD transient voltage suppressor
BZA800AL series
THERMAL CHARACTERISTICS
Note
1. Solder point of common anode (pin 2).
ELECTRICAL CHARACTERISTICS
Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
all diodes loaded
410
K/W
Rth j-s
thermal resistance from junction to solder point;
note 1
one diode loaded
200
K/W
all diodes loaded
185
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VF
forward voltage
IF = 200 mA
1.3
V
IR
reverse current
BZA856AL
VR =3V
1 000
nA
BZA862AL
VR =4V
500
nA
BZA868AL
VR = 4.3 V
100
nA
VZ
working voltage
IZ =1mA
BZA856AL
5.32
5.6
5.88
V
BZA862AL
5.89
6.2
6.51
V
BZA868AL
6.46
6.8
7.14
V
rdif
differential resistance
IZ =1mA
BZA856AL
400
BZA862AL
300
BZA868AL
200
SZ
temperature coefcient
IZ =1mA
BZA856AL
0.3
mV/K
BZA862AL
1.6
mV/K
BZA868AL
2.2
mV/K
Cd
diode capacitance
f = 1 MHz; VR =0
BZA856AL
125
pF
BZA862AL
105
pF
BZA868AL
90
pF
IZSM
non-repetitive peak reverse current
tp = 1 ms; Tamb =25 °C
BZA856AL
2.2
A
BZA862AL
2.1
A
BZA868AL
2A
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