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參數(shù)資料
| 型號(hào)： | 934056850118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | 8 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大?。?/td> | 66K |
| 代理商： | 934056850118 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ105AB
STATIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
CES,ICBO
Collector cut-off current
1
V
BE = 0 V; VCE = VCESMmax
-
0.2
mA
I
CES
V
BE = 0 V; VCE = VCESMmax;
-
0.5
mA
T
j = 125 C
I
CEO
Collector cut-off current
V
CEO = VCEOMmax (400V)
-
0.1
mA
I
EBO
Emitter cut-off current
V
EB = 9 V; IC = 0 A
-
1
mA
V
CEOsust
Collector-emitter sustaining voltage
I
B = 0 A; IC = 10 mA;
400
-
V
L = 25 mH
V
CEsat
Collector-emitter saturation voltage
I
C = 4.0 A;IB = 0.8 A
-
0.3
1.0
V
BEsat
Base-emitter saturation voltage
I
C = 4.0 A;IB = 0.8 A
-
1.0
1.5
V
h
FE
DC current gain
I
C = 1 mA; VCE = 5 V
10
14
34
h
FE
I
C = 500 mA; VCE = 5 V
13
23
36
h
FEsat
I
C = 4.0 A; VCE = 5 V
8
11
15
DYNAMIC CHARACTERISTICS
T
mb = 25 C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
Switching times (resistive load)
I
Con = 5 A; IBon = -IBoff = 1 A;
R
L = 75 ohms; VBB2 = 4 V;
t
on
Turn-on time
0.65
1
s
t
s
Turn-off storage time
1.8
2.5
s
t
f
Turn-off fall time
0.3
0.5
s
Switching times (inductive load)
I
Con = 5 A; IBon = 1 A; LB = 1 H;
-V
BB = 5 V
t
s
Turn-off storage time
1.2
1.7
s
t
f
Turn-off fall time
20
50
ns
Switching times (inductive load)
I
Con = 5 A; IBon = 1 A; LB = 1 H;
-V
BB = 5 V; Tj = 100 C
t
s
Turn-off storage time
1.4
1.9
s
t
f
Turn-off fall time
25
100
ns
1 Measured with half sine-wave voltage (curve tracer).
October 2001
2
Rev 1.000
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