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參數(shù)資料
| 型號： | 934056809118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 30 A 2 CHANNEL, BUF OR INV BASED PRPHL DRVR, PSSO6 |
| 封裝： | PLASTIC, SOT-427, D2PAK-7 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大小： | 51K |
| 代理商： | 934056809118 |
Philips Semiconductors
Product specification
TOPFET dual high side switch
PIP3207-DC
THERMAL CHARACTERISTIC
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
1
R
th j-mb
Junction to mounting base
per channel
-
2.4
3
K/W
both channels
-
1.2
1.5
K/W
STATIC CHARACTERISTICS
Limits are at -40C
≤ T
mb ≤ 150C and typicals at Tmb = 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Clamping voltages
V
BG
Battery to ground
I
G = 1 mA
45
55
65
V
BL
Battery to load per channel
I
L = IG = 1 mA
50
55
65
V
GL
Ground to load
2
I
L = 10 mA
18
23
28
V
I
L = 10 A; tp = 300 s20
25
30
V
Supply voltage
battery to ground
V
BG
Operating range
3
-
5.5
-
35
V
Currents
9 V
≤ V
BG ≤ 35 V
I
B
Total quiescent current
4
V
LG = 0 V
-
20
A
T
mb = 25C
-
0.1
1
A
I
L
Off-state load current per
V
BL = VBG
--
10
A
channel
T
mb = 25C
-
0.1
1
A
I
G
Operating current
one channel on
-
1.8
3
mA
both channels on
-
3.6
6
mA
I
L
Nominal load current
5
V
BL = 0.5 V; Tmb = 85C
8
-
A
R
G
Effective internal ground
I
G = -200 mA; tp = 300 s
40
75
100
resistance
6
Resistances per channel
V
BG
I
L
t
p
7
T
j
R
ON
On-state resistance
9 to 35 V
10 A
300
s 25C
-
30
40
m
150C
-
60
80
m
R
ON
On-state resistance
5.5 V
5 A
300
s 25C
-
50
60
m
150C
-
100
120
m
1 Of the output Power MOS transistors.
2 For a high side switch, the load pin voltage goes negative with respect to ground during the turn-off of an inductive load. This negative voltage
is clamped by the device.
3 On-state resistance is increased if the supply voltage is less than 7 V.
4 This is the continuous current drawn from the battery when both inputs are low and includes leakage currents to the loads.
5 Per channel but with both channels conducting. Defined as in ISO 10483-1.
6 Equivalent of the parallel connected resistors for both channels.
7 The supply and input voltage for the R
ON tests are continuous.
The specified pulse duration t
p refers only to the applied load current.
September 2001
3
Rev 1.100
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