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參數(shù)資料
| 型號： | 934056790118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 50 A, 30 V, 0.0073 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, LFPAK-5 |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 221K |
| 代理商： | 934056790118 |
Philips Semiconductors
PH3230
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 7 February 2002
2 of 12
9397 750 09395
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25 °C
-
30
V
ID
drain current (DC)
Tmb =25 °C
-
50
A
Ptot
total power dissipation
Tmb =25 °C
-
42
W
Tj
junction temperature
-
150
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj =25 °C
3.2
3.7
m
VGS = 4.5 V; ID = 25 A; Tj =25 °C
5.5
7.3
m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to150 °C
-
30
V
VGS
gate-source voltage (DC)
-
±20
V
ID
drain current (DC)
-50
A
IDM
peak drain current
-
200
A
Ptot
total power dissipation
-42
W
Tstg
storage temperature
55
+150
°C
Tj
operating junction temperature
55
+150
°C
Source-drain diode
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
-
50
A
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