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參數(shù)資料
| 型號(hào)： | 934056788118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 75 A, 30 V, 0.004 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 8/13頁(yè) |
| 文件大?。?/td> | 291K |
| 代理商： | 934056788118 |
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2002 May 27
4
Philips Semiconductors
Product specication
2-input NOR gate
74AHC1G02; 74AHCT1G02
Fig.3 IEC logic symbol.
handbook, halfpage
MNA104
4
≥
2
1
1
Fig.4 Logic diagram.
handbook, halfpage
MNA105
B
A
Y
RECOMMENDED OPERATING CONDITIONS
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).
Note
1. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
SYMBOL
PARAMETER
CONDITIONS
74AHC1G
74AHCT1G
UNIT
MIN.
TYP.
MAX.
MIN.
TYP.
MAX.
VCC
supply voltage
2.0
5.0
5.5
4.5
5.0
5.5
V
VI
input voltage
0
5.5
0
5.5
V
VO
output voltage
0
VCC
0
VCC
V
Tamb
operating ambient
temperature
see DC and AC
characteristics per
device
40
+25
+125
40
+25
+125
°C
tr,tf
(
t/f)
input rise and fall
times
VCC = 3.3 ±0.3 V
100
ns/V
VCC =5 ±0.5 V
20
20
ns/V
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCC
supply voltage
0.5
+7.0
V
VI
input voltage
0.5
+7.0
V
IIK
input diode current
VI < 0.5 V
20
mA
IOK
output diode current
VO < 0.5 or VO >VCC + 0.5 V; note 1
±20
mA
IO
output source or sink current
0.5V<VO <VCC + 0.5 V
±25
mA
ICC
VCC or GND current
±75
mA
Tstg
storage temperature
65
+150
°C
PD
power dissipation per package
for temperature range from
40 to +125 °C
250
mW
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