2001 Nov 07
2
Philips Semiconductors
Product specication
15 V low VCEsat NPN double transistor
PBSS2515VS
FEATURES
300 mW total power dissipation
Very small 1.6 x 1.2 mm ultra thin package
Excellent coplanarity due to straight leads
Low collector-emitter saturation voltage
High current capability
Improved thermal behaviour due to flat lead
Replaces two SC-75/SC-89 packaged low VCEsat
transistors on same PCB area
Reduces required PCB area
Reduced pick and place costs.
APPLICATIONS
General purpose switching and muting
Low frequency driver circuits
LCD backlighting
Audio frequency general purpose amplifier applications
Battery driven equipment (mobile phones, video
cameras and hand-held devices).
DESCRIPTION
NPN low VCEsat double transistor in a SOT666 plastic
package.
PNP complement: PBSS3515VS.
MARKING
TYPE NUMBER
MARKING CODE
PBSS2515VS
N9
PINNING
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
handbook, halfpage
MAM447
13
2
TR1
TR2
6
4
5
12
3
4
6
5
Top view
Fig.1
Simplified outline (SOT666) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
15
V
ICM
peak collector current
1
A
RCEsat
equivalent on-resistance
<500
m