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參數(shù)資料
| 型號： | 934056763118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 40 A, 25 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 10/14頁 |
| 文件大?。?/td> | 296K |
| 代理商： | 934056763118 |
Philips Semiconductors
PHP/PHB/PHD45N03LTA
TrenchMOS logic level FET
Product data
Rev. 03 — 2 October 2002
5 of 14
9397 750 10194
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
25
--V
Tj = 55 °C
22
--V
VGS(th)
gate-source threshold voltage
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS =25V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±5 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
-
17.5
24
m
Tj = 175 °C
-
30
40.8
m
Tj =25 °C
-
13
21
m
Tj =25 °C
-
22
40
m
Dynamic characteristics
Qg(tot)
total gate charge
-19
-
nC
Qgs
gate-source charge
-
5
-
nC
Qgd
gate-drain (Miller) charge
-
8
11
nC
Ciss
input capacitance
-
700
-
pF
Coss
output capacitance
-
290
-
pF
Crss
reverse transfer capacitance
-
200
-
pF
td(on)
turn-on delay time
VDD =15V; ID = 15 A; VGS =10V;
RG =6 ; resistive load
-
1020ns
tr
rise time
-
6090ns
td(off)
turn-off delay time
-
35
60
ns
tf
fall time
-
4060ns
Source-drain diode
VSD
-
0.95
1.2
V
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