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參數(shù)資料
| 型號： | 934056740127 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 放大器 |
| 英文描述： | 869 MHz - 894 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 封裝： | PLASTIC, SOT-365C, 3 PIN |
| 文件頁數(shù)： | 8/12頁 |
| 文件大?。?/td> | 90K |
| 代理商： | 934056740127 |
2003 Feb 26
5
Philips Semiconductors
Product specication
GSM800 EDGE power module
BGF844
handbook, halfpage
0
8
16
32
30.4
28.4
30
24
29.6
29.2
28.8
60
0
48
36
24
12
MBL776
PL (W)
Gp
(dB)
Gp
η
(%)
η
Fig.6
CW gain power and efficiency as functions
of load power; typical values.
f = 882 MHz.
handbook, halfpage
04
8
16
30
29.6
28.8
28.4
29.2
48
36
12
0
24
12
MBL777
Gp
(dB)
PL (W)
η
(%)
Fig.7
Two tone gain power and efficiency as
functions of load power; typical values.
f1 = 882 MHz; f2 = 883 MHz.
handbook, halfpage
04
8
16
20
70
30
12
40
50
60
MBL778
dim
(dBc)
d3
d5
d7
PL (AV) (W)
Fig.8
Two tone intermodulation distortion as a
function of average load power; typical
values.
f1 = 882 MHz; f2 = 883 MHz.
handbook, halfpage
750
850
950
1050
30
20
28
26
24
22
0
30
6
12
18
24
MBL779
s21
(dB)
s11
(dB)
s11
s21
s11
f (kHz)
Fig.9 s-parameters as a function of frequency.
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