參數(shù)資料
型號: 934056739127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 40 A, 25 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 7/14頁
文件大?。?/td> 296K
代理商: 934056739127
Philips Semiconductors
PHP/PHB/PHD45N03LTA
TrenchMOS logic level FET
Product data
Rev. 03 — 2 October 2002
2 of 14
9397 750 10194
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ T
j ≤ 175 °C
-
25
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
-
40
A
Ptot
total power dissipation
Tmb =25 °C
-
65
W
Tj
junction temperature
-
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj =25 °C13
21
m
VGS =5V; ID = 25 A; Tj =25 °C
17.5
24
m
VGS = 3.5 V; ID = 5.2 A; Tj =25 °C
2240m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
25
°C ≤ Tj ≤ 175 °C
-
25
V
VDGR
drain-gate voltage (DC)
25
°C ≤ Tj ≤ 175 °C; RGS =20k
-25
V
VGS
gate-source voltage
-
±20
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V; Figure 2 and 3
-40
A
Tmb = 100 °C; VGS =5V; Figure 2
-30
A
IDM
peak drain current
Tmb =25 °C; pulsed; tp ≤ 10 s; Figure 3
-
160
A
Ptot
total power dissipation
Tmb =25 °C; Figure 1
-65
W
Tstg
storage temperature
55
+175
°C
Tj
junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
-
40
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
-
160
A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy
unclamped inductive load;
ID = 20 A; tp = 0.1 ms; VDD =15V;
RGS =50 ; VGS = 5V; starting Tj =25 °C;
-40
mJ
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