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參數(shù)資料
| 型號： | 934056737118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 72 A, 25 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | PLASTIC, SMD, SC-63, DPAK-3 |
| 文件頁數(shù)： | 6/13頁 |
| 文件大?。?/td> | 272K |
| 代理商： | 934056737118 |
Philips Semiconductors
PHD83N03LT
N-channel enhancement mode eld-effect transistor
Product data
Rev. 01 — 16 July 2001
2 of 13
9397 750 08217
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
25
V
ID
drain current (DC)
Tmb =25 °C; VGS =5V
72
A
Ptot
total power dissipation
Tmb =25 °C
107
W
Tj
junction temperature
175
°C
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A; Tj =25 °C
6.5
9
m
VGS =5V; ID = 25 A; Tj =25 °C
1012m
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDS
drain-source voltage (DC)
Tj =25to175 °C
25
V
VDGR
drain-gate voltage (DC)
Tj =25to175 °C; RGS =20k
25
V
VGS
gate-source voltage (DC)
±15
V
VGSM
gate-source voltage
tp ≤ 50 s; pulsed;
duty cycle 25%; Tj ≤ 150 °C
±20
V
ID
drain current (DC)
72
A
51
A
IDM
peak drain current
240
A
Ptot
total power dissipation
107
W
Tstg
storage temperature
55
+175
°C
Tj
operating junction temperature
55
+175
°C
Source-drain diode
IS
source (diode forward) current (DC)
Tmb =25 °C
75
A
ISM
peak source (diode forward) current Tmb =25 °C; pulsed; tp ≤ 10 s
240
A
Avalanche ruggedness
EAS
non-repetitive avalanche energy
unclamped inductive load;
ID =75A;tp = 0.1 ms; VDD =15V;
RGS =50 ; VGS = 5V; starting Tj =25 °C
120
mJ
IAS
non-repetitive avalanche current
unclamped inductive load;
VDD =15V;RGS =50 ; VGS =5V;
starting Tj =25 °C
72
A
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