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參數(shù)資料
| 型號(hào)： | 934056707115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 100 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC PACKAGE-6 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 46K |
| 代理商： | 934056707115 |
2001 Nov 07
2
Philips Semiconductors
Product specication
PNP general purpose double transistor
PEMT1
FEATURES
300 mW total power dissipation
Very small 1.6 × 1.2 mm ultra thin package
Self alignment during soldering due to straight leads
Replaces two SC-75/SC-89 packaged transistors on
same PCB area
Reduced required PCB area
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor pair in a SOT666 plastic package.
NPN complement: PEMX1.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
PEMT1
FF
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
MAM450
13
2
TR1
TR2
6
4
5
12
3
4
6
5
Top view
Fig.1 Simplified outline (SOT666) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
200
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
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