參數(shù)資料
型號: 934056703118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 43 A, 55 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
封裝: PLASTIC, SC-63, DPAK-3
文件頁數(shù): 9/13頁
文件大?。?/td> 273K
代理商: 934056703118
Philips Semiconductors
BUK7225-55A
TrenchMOS standard level FET
Product specication
Rev. 01 — 17 April 2001
5 of 13
9397 750 08222
Philips Electronics N.V. 2001. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source breakdown
voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C55
V
Tj = 55 °C50
V
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS =VGS;
Tj =25 °C2
3
4
V
Tj = 175 °C1
V
Tj = 55 °C
4.4
V
IDSS
drain-source leakage current
VDS = 55 V; VGS =0V
Tj =25 °C
0.05
10
A
Tj = 175 °C
500
A
IGSS
gate-source leakage current
VGS = ±20 V; VDS =0V
2
100
nA
RDSon
drain-source on-state
resistance
VGS =10V; ID =25A;
Tj =25 °C
21
25
m
Tj = 175 °C
50
m
Dynamic characteristics
Ciss
input capacitance
VGS =0V; VDS =25V;
f = 1 MHz; Figure 12
980
1310
pF
Coss
output capacitance
240
290
pF
Crss
reverse transfer capacitance
150
210
pF
td(on)
turn-on delay time
VDD = 30 V; RL = 1.2 ;
VGS =10V; RG =10 ;
11
ns
tr
rise time
56
ns
td(off)
turn-off delay time
38
ns
tf
fall time
31
ns
Ld
internal drain inductance
measured from drain to
centre of die
2.5
nH
Ls
internal source inductance
measured from source lead
to source bond pad
7.5
nH
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