參數(shù)資料
型號(hào): 934056667412
廠商: NXP SEMICONDUCTORS
元件分類: 晶閘管
英文描述: 400 V, 0.6 A, 4 QUADRANT LOGIC LEVEL TRIAC, TO-92
封裝: PLASTIC, SPT, SC-43, 3 PIN
文件頁數(shù): 5/12頁
文件大小: 227K
代理商: 934056667412
Philips Semiconductors
MAC97A8; MAC97A6
Logic level triac
Product specication
Rev. 01 — 29 March 2001
2 of 12
9397 750 07917
Philips Electronics N.V. 2001. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Quick reference data
Symbol Parameter
Conditions
Typ
Max
Unit
VDRM
repetitive peak off-state voltage
MAC97A8
MAC97A6
Tj =25to125 °C
600
V
Tj =25to125 °C
400
V
IT(RMS)
on-state current (RMS value)
full sine wave; Tlead ≤ 50 °C; Figure 5
0.6
A
ITSM
non-repetitive peak on-state current
8.0
A
Table 3:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
Max
Unit
VDRM
repetitive peak off-state voltage
MAC97A8
MAC97A6
Tj =25to125 °C
600
V
Tj =25to125 °C
400
V
IT(RMS)
on-state current (RMS value)
full sine wave; Tlead ≤ 50 °C; Figure 5
0.6
A
ITSM
non-repetitive peak on-state current
full sine wave; Tj =25 °C prior to surge
t=20ms
8.0
A
t = 16.7 ms
8.8
A
I2tI2t for fusing
t
= 10 ms
0.32
A2s
dIT/dt
repetitive rate of rise of on-state
current after triggering
ITM = 1.0 A; IG = 0.2 A; dIG/dt = 0.2 A/s
T2+ G+
50
A/
s
T2+ G
50
A/
s
T2
G
50
A/
s
T2
G+
10
A/
s
IGM
gate current (peak value)
t = 2
s max
1A
VGM
gate voltage (peak value)
t = 2
s max
5
V
PGM
gate power (peak value)
t = 2
s max
5W
PG(AV)
average gate power
Tcase =80 °C; t = 2 s max
0.1
W
Tstg
storage temperature
40
+150
°C
Tj
operating junction temperature
40
+125
°C
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