參數(shù)資料
型號: 934056666127
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝: PLASTIC, SC-46, 3 PIN
文件頁數(shù): 11/14頁
文件大小: 294K
代理商: 934056666127
Philips Semiconductors
PHP/PHB/PHD55N03LTA
TrenchMOS Logic Level FET
Product data
Rev. 04 — 4 September 2002
6 of 14
9397 750 10143
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Tj =25 °CTj =25 °C and 175 °C; VDS >ID xRDSon
Fig 5.
Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6.
Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
Tj =25 °C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature.
03ae65
0
20
40
60
0
0.5
1
1.5
2
VDS (V)
ID
(A)
3 V
5 V
Tj = 25 °C
VGS = 2.5 V
10 V
3.5 V
4 V
4.5 V
03ae67
0
20
40
60
01
23
45
VGS (V)
ID
(A)
VDS > ID x RDSon
Tj = 25 °C
175
°C
03ae66
0
0.01
0.02
0.03
020
40
60
ID (A)
RDSon
(
)
4.5 V
VGS = 4 V
Tj = 25 °C
5V
10 V
03ad57
0
0.5
1
1.5
2
-60
0
60
120
180
Tj (°C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
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