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參數(shù)資料
| 型號(hào)： | 934056665118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁(yè)數(shù)： | 10/14頁(yè) |
| 文件大小： | 294K |
| 代理商： | 934056665118 |
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Philips Semiconductors
PHP/PHB/PHD55N03LTA
TrenchMOS Logic Level FET
Product data
Rev. 04 — 4 September 2002
5 of 14
9397 750 10143
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
8.
Characteristics
Table 5:
Characteristics
Tj =25 °C unless otherwise specied.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source breakdown voltage
ID = 0.25 mA; VGS =0V
Tj =25 °C
25
--V
Tj = 55 °C
22
--V
VGS(th)
gate-source threshold voltage
Tj =25 °C
1
1.5
2
V
Tj = 175 °C
0.5
-
V
Tj = 55 °C
-
2.3
V
IDSS
drain-source leakage current
VDS =25V; VGS =0V
Tj =25 °C
-
0.05
10
A
Tj = 175 °C
-
500
A
IGSS
gate-source leakage current
VGS = ±5 V; VDS = 0 V
-
10
100
nA
RDSon
drain-source on-state resistance
Tj =25 °C
-
15
18
m
Tj = 175 °C
-
25.5
30.6
m
VGS = 10 V; ID =25A
Tj =25 °C
-
11
14
m
Dynamic characteristics
gfs
forward transconductance
VDS =25V; ID =25A
-
32
-
S
Qg(tot)
total gate charge
-20
-
nC
Qgs
gate-source charge
-
8
-
nC
Qgd
gate-drain (Miller) charge
-
7
-
nC
Ciss
input capacitance
-
950
-
pF
Coss
output capacitance
-
340
-
pF
Crss
reverse transfer capacitance
-
230
-
pF
td(on)
turn-on delay time
VDD =15V; ID = 55 A; VGS = 10 V; RG =5
-
8
15
ns
tr
rise time
-
4580ns
td(off)
turn-off delay time
-
45
80
ns
tf
fall time
-
4060ns
Source-drain diode
VSD
-
0.95
1.2
V
IS =55A;VGS = 0 V
-
1.2
-
V
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