- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄24727 > 934056663118 (NXP SEMICONDUCTORS) 30 A BUF OR INV BASED PRPHL DRVR, PSSO6 PDF資料下載
參數(shù)資料
| 型號： | 934056663118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | 30 A BUF OR INV BASED PRPHL DRVR, PSSO6 |
| 封裝： | PLASTIC, SOT-427, D2PAK-7 |
| 文件頁數(shù)： | 5/9頁 |
| 文件大小： | 51K |
| 代理商： | 934056663118 |
Philips Semiconductors
Product specification
TOPFET dual high side switch
PIP3202-DC
UNDERVOLTAGE & OVERVOLTAGE CHARACTERISTICS
Limits are at -40C
≤ T
mb ≤ 150C and typicals at Tmb = 25C.
Refer to TRUTH TABLE.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Undervoltage
V
BG(UV)
Low supply threshold voltage
1
2
4.2
5.3
V
BG(UV)
Hysteresis
0.1
0.5
1
V
Overvoltage
V
BG(OV)
High supply threshold voltage
2
35
40
45
V
BG(OV)
Hysteresis
0.4
1
2
V
I
BG(OV)
Operating current per channel
V
BG > VBG(OV)
-1
2
mA
OVERLOAD PROTECTION CHARACTERISTICS
Independent protection per channel. Refer to TRUTH TABLE.
5.5 V
≤ V
BG ≤ 35 V, limits are at -40C ≤ Tmb ≤ 150C and typicals at Tmb = 25C unless otherwise stated.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Overload protection
V
BL = VBG; tp = 300 s
I
L(lim)
Load current limiting
V
BG ≥ 8 V
18
30
42
A
V
BG = 5.5 V
15
27
42
A
Short circuit load protection
T
mb ≤ 125C prior to overload
3
P
D(TO)
Overload power threshold
for latched protection
4
100
150
200
W
T
DSC
Characteristic time
which determines trip time
5
-
200
500
s
Overtemperature protection
T
j(TO)
Threshold junction temperature
150
170
190
C
T
j(TO)
Hysteresis
6
3
1020C
1 Undervoltage sensors causes each channel to switch off and reset.
2 Overvoltage sensors causes each output channel to switch off to protect its load.
3 Above this temperature measurement of these parameters is prevented because OT protection may occur prior to SC protection.
4 SC protection for P
D > PD(TO) is latched.
Normal operation may only be resumed after the input is toggled low then high again.
Normal operation is maintained as long as P
D < PD(TO) and Tj < Tj(TO).
5 Trip time t
d sc varies with overload dissipation PD according to the exponential model formula td sc ≈ TDSC / LN[ PD / PD(TO) ].
6 After cooling below the reset temperature the channel will resume normal operation.
September 2001
5
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 934056671115 | 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 934056688116 | 1 A, 350 V, NPN, Si, POWER TRANSISTOR, TO-92 |
| 934056689127 | 920 MHz - 960 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER |
| 934056690115 | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
| 934056691115 | L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
| 934057052116 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052126 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052412 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。