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參數(shù)資料
| 型號： | 934056662115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 100 mA, 40 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | PLASTIC, SMT6, SSOT6, SC-74, TSOP-6 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 47K |
| 代理商： | 934056662115 |
2001 Oct 22
2
Philips Semiconductors
Product specication
PNP general purpose double transistor
PIMT1
FEATURES
600 mW total power dissipation
Low current (max. 100 mA)
Low voltage (max. 40 V)
Reduces number of components and required
PCB area
Reduced pick and place costs.
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
PNP transistor pair in an SC-74 (SOT457) plastic
package.
MARKING
PINNING
TYPE NUMBER
MARKING CODE
PIMT1
M1
PIN
DESCRIPTION
1, 4
emitter
TR1; TR2
2, 5
base
TR1; TR2
6, 3
collector
TR1; TR2
MAM457
13
2
TR1
TR2
6
4
5
Top view
12
3
65
4
Fig.1
Simplified outline (SC74; SOT457) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single sided copper, tinplated and mounting pad for collector 1 cm2.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor
VCBO
collector-base voltage
open emitter
50
V
VCEO
collector-emitter voltage
open base
40
V
VEBO
emitter-base voltage
open collector
5V
IC
collector current (DC)
100
mA
ICM
peak collector current
200
mA
IBM
peak base current
200
mA
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
300
mW
Tstg
storage temperature
65
+150
°C
Tj
junction temperature
150
°C
Tamb
operating ambient temperature
65
+150
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
600
mW
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