參數(shù)資料
型號： 934056660115
廠商： NXP SEMICONDUCTORS
元件分類： 小信號晶體管
英文描述： 1000 mA, 40 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR
封裝： PLASTIC, SMT6, SSOT6, SMD, SC-74, TSOP-6
文件頁數(shù)： 8/12頁
文件大?。?/td> 70K
代理商： 934056660115
2001 Dec 13
5
Philips Semiconductors
Product specication
40 V low VCEsat NPN/PNP transistor
PBSS4140DPN
handbook, halfpage
0
1000
200
400
600
800
MLD642
101
1
(1)
10
IC (mA)
hFE
102
103
104
(3)
(2)
Fig.2
DC current gain as a function of collector
current; typical values.
TR1 (NPN); VCE =5V.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
10
1
101
110
102
103
104
101
IC (mA)
VBE
(V)
(1)
(3)
(2)
MLD635
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
TR1 (NPN); VCE =5V.
(1) Tamb = 55 °C.
(2) Tamb =25 °C.
(3) Tamb = 150 °C.
handbook, halfpage
103
102
10
1
MLD636
110
102
IC (mA)
VCEsat
(mV)
103
104
(3)
(2)
(1)
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
TR1 (NPN); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
10
1
101
102
MHC126
101
110
RCEsat
(
)
IC (mA)
103
102
104
(1)
(2)
(3)
Fig.5
Equivalent on-resistance as a function of
collector current; typical values.
TR1 (NPN); IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
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