參數(shù)資料
型號: 934056648118
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: 75 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, SMD, D2PAK-3
文件頁數(shù): 12/14頁
文件大?。?/td> 251K
代理商: 934056648118
Philips Semiconductors
PHP112N06T; PHB112N06T
N-channel enhancement mode eld-effect transistor
Product specication
Rev. 01 — 07 March 2001
7 of 14
9397 750 08108
Philips Electronics N.V. 2001. All rights reserved.
ID = 1 mA; VDS =VGS
Tj =25 °C
Fig 10. Gate-source threshold voltage as a function of
junction temperature.
Fig 11. Sub-threshold drain current as a function of
gate-source voltage.
Tj =25 °C; VDS = 25 V
VGS = 0 V; f = 1 MHz
Fig 12. Forward transconductance as a function of
drain current; typical values.
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
0
1
2
3
4
5
0
40
80
120
160
200
-40
-80
max.
typ
min
VGS(th)
(V)
Tj (
oC)
003aaa077
2%
typ
98%
10-1
10-2
10-3
10-4
10-5
10-6
0
1
2
345
ID
(A)
VGS (V)
003aaa078
60
50
40
30
20
10
0
100
80
60
40
20
0
ID (A)
gfs
(S)
003aaa075
Ciss,
Coss,
Crss
(nF)
7
6
5
4
3
2
1
0
10-2
10-1
1
10
102
VDS (V)
Ciss
Coss
Crss
003aaa079
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