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參數(shù)資料
| 型號(hào)： | 934056627115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 放大器 |
| 英文描述： | RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER |
| 封裝： | PLASTIC, UMT6, SC-88, SOT-363, 6 PIN |
| 文件頁(yè)數(shù)： | 6/12頁(yè) |
| 文件大?。?/td> | 78K |
| 代理商： | 934056627115 |
2001 Oct 19
3
Philips Semiconductors
Product specication
MMIC wideband amplier
BGA2711
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
THERMAL RESISTANCE
CHARACTERISTICS
VS =5V; IS = 12.6 mA; f = 1 GHz; Tj =25 °C unless otherwise specied.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VS
DC supply voltage
RF input AC coupled
6V
IS
supply current
20
mA
Ptot
total power dissipation
Ts ≤ 80 °C
200
mW
Tstg
storage temperature
65
+150
°C
Tj
operating junction temperature
150
°C
PD
maximum drive power
10
dBm
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-s
thermal resistance from junction to solder
point
Ptot = 200 mW; Ts ≤ 80 °C
300
K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IS
supply current
10
12.6
16
mA
|s21|2
insertion power gain
f = 1 GHz
13.1
dB
f = 2 GHz
13.9
dB
RLIN
return losses input
f = 1 GHz
11
dB
f = 2 GHz
10
dB
RL OUT
return losses output
f = 1 GHz
18
dB
f = 2 GHz
13
dB
NF
noise gure
f = 1 GHz
4.8
dB
f = 2 GHz
4.8
dB
BW
bandwidth
at
|s
21|
2
3 dB below at gain at 1 GHz
3.6
GHz
PL(sat)
saturated load power
f = 1 GHz
2.8
dBm
f = 2 GHz
0.6
dBm
PL 1 dB
load power
at 1 dB gain compression; f = 1 GHz
0.7
dBm
at 1 dB gain compression; f = 2 GHz
1.8
dBm
IP3(in)
input intercept point
f = 1 GHz
4.8
dBm
f = 2 GHz
8.5
dBm
IP3(out)
output intercept point
f = 1 GHz
8.3
dBm
f = 2 GHz
5.4
dBm
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