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參數(shù)資料
| 型號(hào)： | 934056607215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2000 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, 3 PIN |
| 文件頁數(shù)： | 5/12頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 934056607215 |
2001 Oct 31
2
Philips Semiconductors
Product specication
40 V low VCEsat PNP transistor
PBSS5240T
FEATURES
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat
generation
Replacement for SOT89/SOT223 standard packaged
transistor.
APPLICATIONS
Supply line switching circuits
Battery management applications
DC/DC converter applications
Strobe flash units
Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4240T.
MARKING
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
PBSS5240T
ZF*
PINNING
PIN
DESCRIPTION
1
base
2
emitter
collector
handbook, halfpage
2
1
3
MAM256
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
IC
collector current (DC)
2A
ICM
peak collector current
3A
RCEsat
equivalent on-resistance
<220
m
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