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參數(shù)資料
| 型號： | 934056606215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 3000 mA, 40 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SMD, SST, 3 PIN |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 45K |
| 代理商： | 934056606215 |
2001 Jul 13
2
Philips Semiconductors
Product specication
40 V low VCEsat NPN transistor
PBSS4240T
FEATURES
Low collector-emitter saturation voltage
High current capability
Improved device reliability due to reduced heat
generation
Replacement for SOT89/SOT223 standard packaged
transistors.
APPLICATIONS
Supply line switching circuits
Battery management applications
DC/DC converter applications
Strobe flash units
Heavy duty battery powered equipment (motor and lamp
drivers).
DESCRIPTION
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5240T.
MARKING
Note
1. * = p: made in Hongkong.
* = t: made in Malaysia.
TYPE NUMBER
MARKING CODE(1)
PBSS4240T
ZE*
PINNING
PIN
DESCRIPTION
1
base
2
emitter
3
collector
handbook, halfpage
2
1
3
MAM255
Top view
2
3
1
Fig.1 Simplified outline (SOT23) and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
40
V
ICM
peak collector current
3
A
RCEsat
equivalent on-resistance
<200
m
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