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| 型號： | 934056604215 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB |
| 封裝： | PLASTIC, SST3, SMD, 3 PIN |
| 文件頁數(shù)： | 9/12頁 |
| 文件大?。?/td> | 75K |
| 代理商： | 934056604215 |
2002 Aug 08
6
Philips Semiconductors
Product specication
50 V low VCEsat NPN transistor
PBSS4350T
handbook, halfpage
MLD871
10
103
102
101
110
IC (mA)
VCEsat
(mV)
102
103
104
1
(3)
(2)
(1)
Fig.6
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MLD872
10
103
102
101
110
IC (mA)
VCEsat
(mV)
102
103
104
1
(3)
(1)
(2)
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MLD873
104
103
102
101
110
IC (mA)
VCEsat
(mV)
102
103
104
10
(3)
(1)
(2)
Fig.8
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 50.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
handbook, halfpage
MLD874
104
103
102
101
110
IC (mA)
VCEsat
(mV)
102
103
104
10
(3)
(1)
(2)
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
IC/IB = 100.
(1) Tamb = 150 °C.
(2) Tamb =25 °C.
(3) Tamb = 55 °C.
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