- 您現(xiàn)在的位置：買賣IC網 > PDF目錄24704 > 934056271118 (NXP SEMICONDUCTORS) 13 A, 55 V, 0.161 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | 934056271118 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | 13 A, 55 V, 0.161 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, SMD, D2PAK-3 |
| 文件頁數： | 2/9頁 |
| 文件大?。?/td> | 71K |
| 代理商： | 934056271118 |
Philips Semiconductors
Product specification
TrenchMOS
transistor
BUK95150-55A
Logic level FET
BUK96150-55A
STATIC CHARACTERISTICS
T
j= 25C
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
(BR)DSS
Drain-source breakdown
V
GS = 0 V; ID = 0.25 mA;
55
-
V
voltage
T
j = -55C
50
-
V
GS(TO)
Gate threshold voltage
V
DS = VGS; ID = 1 mA
1
1.5
2.0
V
T
j = 175C
0.5
-
V
T
j = -55C
-
2.3
V
I
DSS
Zero gate voltage drain current
V
DS = 55 V; VGS = 0 V;
-
0.05
10
A
T
j = 175C
-
500
A
I
GSS
Gate source leakage current
V
GS = ±10 V; VDS = 0 V
-
2
100
nA
R
DS(ON)
Drain-source on-state
V
GS = 5 V; ID = 13 A
-
125
150
m
resistance
T
j = 175C
-
300
m
V
GS = 10 V; ID = 13 A
-
116
137
m
V
GS = 4.5 V; ID = 13 A
-
124
161
m
DYNAMIC CHARACTERISTICS
T
mb = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
C
iss
Input capacitance
V
GS = 0 V; VDS = 25 V; f = 1 MHz
-
254
339
pF
C
oss
Output capacitance
-
54
65
pF
C
rss
Feedback capacitance
-
42
58
pF
t
d on
Turn-on delay time
V
DD = 30 V; Rload =1.2;-
6
ns
t
r
Turn-on rise time
V
GS = 5 V; RG = 10
-
285
428
ns
t
d off
Turn-off delay time
-
1
1.4
ns
t
f
Turn-off fall time
-
18
25
ns
L
d
Internal drain inductance
Measured from drain lead 6 mm
-
4.5
-
nH
from package to centre of die
L
d
Internal drain inductance
Measured from contact screw on
-
3.5
-
nH
tab to centre of die(TO220AB)
L
d
Internal drain inductance
Measured from upper edge of drain
-
2.5
-
nH
tab to centre of die(SOT404)
L
s
Internal source inductance
Measured from source lead to
-
7.5
-
nH
source bond pad
REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS
T
j = 25C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
DR
Continuous reverse drain
-
13
A
current
I
DRM
Pulsed reverse drain current
-
53
A
V
SD
Diode forward voltage
I
F = 25 A; VGS = 0 V
-
0.85
1.2
V
I
F = 53 A; VGS = 0 V
-
1.1
-
V
t
rr
Reverse recovery time
I
F = 53 A; -dIF/dt = 100 A/s;
-
24
-
ns
Q
rr
Reverse recovery charge
V
GS = -10 V; VR = 30 V
-
0.026
-
C
February 2000
2
Rev 1.000
相關PDF資料 |
PDF描述 |
|---|---|
| 934056270118 | 20 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934056259127 | 20 A, 55 V, 0.075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934056272118 | 11 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 934056261127 | 11 A, 55 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 934056278127 | 26 A, 100 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 934056947115 | 制造商:NXP Semiconductors 功能描述:Trans GP BJT NPN 15V 0.2A 4-Pin(3+Tab) SOT-89 T/R |
| 934056954118 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 60V 34A 3-Pin(2+Tab) D2PAK T/R |
| 934057052116 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052126 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
| 934057052412 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Logic level four-quadrant triac |
發(fā)布緊急采購，3分鐘左右您將得到回復。